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5961-01-346-7582
20 Products
2N6070B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013467582
NSN
5961-01-346-7582
2N6070B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013467582
NSN
5961-01-346-7582
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FUNCTION FOR WHICH DESIGNED: BIDIRECTIONAL
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.595 INCHES MINIMUM AND 0.655 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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645A798H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467715
NSN
5961-01-346-7715
645A798H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467715
NSN
5961-01-346-7715
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DESIGN CONTROL REFERENCE: 645A798H01
III END ITEM IDENTIFICATION: USED ON ASR9 EQUIPMENT
MANUFACTURERS CODE: 97942
THE MANUFACTURERS DATA:
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JANTXV2N6804
TRANSISTOR
NSN, MFG P/N
5961013467890
NSN
5961-01-346-7890
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -50.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6804
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/562
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/562 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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JANTXV1N6058A
TRANSISTOR
NSN, MFG P/N
5961013467891
NSN
5961-01-346-7891
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6058A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 58.9 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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1A20276H01
TRANSISTOR
NSN, MFG P/N
5961013467892
NSN
5961-01-346-7892
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.155 INCHES NOMINAL
OVERALL LENGTH: 0.810 INCHES NOMINAL
OVERALL WIDTH: 0.745 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 2 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE
~1: SHORT-CIRCUITED TO EMITTER
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467893
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5961-01-346-7893
152-0886-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467893
NSN
5961-01-346-7893
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013467893
NSN
5961-01-346-7893
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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TRANSISTOR
NSN, MFG P/N
5961013468447
NSN
5961-01-346-8447
MFG
LOGIMETRICS INC
Description
TRANSISTOR
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980712-1
TRANSISTOR
NSN, MFG P/N
5961013468448
NSN
5961-01-346-8448
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
TRANSISTOR
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2N6553
TRANSISTOR
NSN, MFG P/N
5961013468737
NSN
5961-01-346-8737
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-250-9594 GENERATOR,SIGNAL
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.173 INCHES MINIMUM AND 0.183 INCHES MAXIMUM
OVERALL LENGTH: 0.860 INCHES MINIMUM AND 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.480 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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QBNP-06553
TRANSISTOR
NSN, MFG P/N
5961013468737
NSN
5961-01-346-8737
MFG
GIGA-TRONICS INCORPORATED
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-250-9594 GENERATOR,SIGNAL
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.173 INCHES MINIMUM AND 0.183 INCHES MAXIMUM
OVERALL LENGTH: 0.860 INCHES MINIMUM AND 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.480 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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2N6555
TRANSISTOR
NSN, MFG P/N
5961013468738
NSN
5961-01-346-8738
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III END ITEM IDENTIFICATION: 6625-01-250-9594 GENERATOR,SIGNAL
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.860 INCHES MINIMUM AND 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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QBPP-06555
TRANSISTOR
NSN, MFG P/N
5961013468738
NSN
5961-01-346-8738
MFG
GIGA-TRONICS INCORPORATED
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III END ITEM IDENTIFICATION: 6625-01-250-9594 GENERATOR,SIGNAL
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.860 INCHES MINIMUM AND 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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151-0567-00
TRANSISTOR
NSN, MFG P/N
5961013468739
NSN
5961-01-346-8739
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
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1N6068A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013468741
NSN
5961-01-346-8741
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CAPACITANCE RATING IN PICOFARADS: 5.0 NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 179.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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200453-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013468742
NSN
5961-01-346-8742
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013468743
NSN
5961-01-346-8743
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY
Description
III END ITEM IDENTIFICATION: ELECTRONIC WAR SYSTEMS APECS II/AR/700
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013468744
NSN
5961-01-346-8744
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013468744
NSN
5961-01-346-8744
MFG
BELL HELICOPTER TEXTRON INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE INSULATION TUBING,INSULATED WIRE LEADS ADDED: 3.700 IN. ONE SIDE AND 8.000 IN. OTHER SIDE; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 30.5 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013468744
NSN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013468744
NSN
5961-01-346-8744
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE INSULATION TUBING,INSULATED WIRE LEADS ADDED: 3.700 IN. ONE SIDE AND 8.000 IN. OTHER SIDE; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 30.5 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013468745
NSN
5961-01-346-8745
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
