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5961-01-339-3842

20 Products

SZ 4.3-1%

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393842

NSN

5961-01-339-3842

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SZ 4.3-1%

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393842

NSN

5961-01-339-3842

MFG

JAPLAR GROUP INC. DBA JAPLAR SCHAUER

15KP33A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013392849

NSN

5961-01-339-2849

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15KP33A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013392849

NSN

5961-01-339-2849

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.7 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

Q4015L5

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013392850

NSN

5961-01-339-2850

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Q4015L5

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013392850

NSN

5961-01-339-2850

MFG

TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO

Description

OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL

CAT17683

TRANSISTOR

NSN, MFG P/N

5961013393268

NSN

5961-01-339-3268

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CAT17683

TRANSISTOR

NSN, MFG P/N

5961013393268

NSN

5961-01-339-3268

MFG

NICE CTI SYSTEMS UK LTD

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE AN/TYQ-23(V)1
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.676 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 240.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 900.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

ZTX109B

TRANSISTOR

NSN, MFG P/N

5961013393268

NSN

5961-01-339-3268

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ZTX109B

TRANSISTOR

NSN, MFG P/N

5961013393268

NSN

5961-01-339-3268

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS MODULE AN/TYQ-23(V)1
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.676 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 240.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 900.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

BFX 88

TRANSISTOR

NSN, MFG P/N

5961013393269

NSN

5961-01-339-3269

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BFX 88

TRANSISTOR

NSN, MFG P/N

5961013393269

NSN

5961-01-339-3269

MFG

VISHAY

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 9.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 5.08 MILLIMETERS NOMINAL
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 125.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

BFX88

TRANSISTOR

NSN, MFG P/N

5961013393269

NSN

5961-01-339-3269

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BFX88

TRANSISTOR

NSN, MFG P/N

5961013393269

NSN

5961-01-339-3269

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 9.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 5.08 MILLIMETERS NOMINAL
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 125.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

CAT9040

TRANSISTOR

NSN, MFG P/N

5961013393269

NSN

5961-01-339-3269

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CAT9040

TRANSISTOR

NSN, MFG P/N

5961013393269

NSN

5961-01-339-3269

MFG

NICE CTI SYSTEMS UK LTD

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 9.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.6 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 5.08 MILLIMETERS NOMINAL
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 125.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

CAT13972

TRANSISTOR

NSN, MFG P/N

5961013393270

NSN

5961-01-339-3270

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CAT13972

TRANSISTOR

NSN, MFG P/N

5961013393270

NSN

5961-01-339-3270

MFG

NICE CTI SYSTEMS UK LTD

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.16 MILLIMETERS MINIMUM AND 2.42 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.61 MILLIMETERS MINIMUM AND 4.01 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.37 MILLIMETERS MINIMUM AND 4.77 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.406 MILLIMETERS MINIMUM AND 0.495 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 80.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 550.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

ZTX213BK

TRANSISTOR

NSN, MFG P/N

5961013393270

NSN

5961-01-339-3270

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ZTX213BK

TRANSISTOR

NSN, MFG P/N

5961013393270

NSN

5961-01-339-3270

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.16 MILLIMETERS MINIMUM AND 2.42 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.61 MILLIMETERS MINIMUM AND 4.01 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.37 MILLIMETERS MINIMUM AND 4.77 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.406 MILLIMETERS MINIMUM AND 0.495 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 80.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 550.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

BDV64B

TRANSISTOR

NSN, MFG P/N

5961013393271

NSN

5961-01-339-3271

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BDV64B

TRANSISTOR

NSN, MFG P/N

5961013393271

NSN

5961-01-339-3271

MFG

PHILIPS SEMICONDUCTORS INC

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-93
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 21.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 13.6 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

1901-1183

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393272

NSN

5961-01-339-3272

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1901-1183

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393272

NSN

5961-01-339-3272

MFG

HEWLETT PACKARD CO

Description

CAPACITANCE RATING IN PICOFARADS: 10.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-34
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.04 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC

BAT85

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393272

NSN

5961-01-339-3272

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BAT85

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393272

NSN

5961-01-339-3272

MFG

DLA LAND AND MARITIME

Description

CAPACITANCE RATING IN PICOFARADS: 10.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-34
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.04 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC

CAT2852

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393272

NSN

5961-01-339-3272

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CAT2852

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393272

NSN

5961-01-339-3272

MFG

NICE CTI SYSTEMS UK LTD

Description

CAPACITANCE RATING IN PICOFARADS: 10.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-34
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.04 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC

129838

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013393273

NSN

5961-01-339-3273

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129838

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013393273

NSN

5961-01-339-3273

MFG

FLUKE CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 7.50 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL AND PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 15.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.3 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 13.5 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

BT 151-500R

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013393273

NSN

5961-01-339-3273

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BT 151-500R

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013393273

NSN

5961-01-339-3273

MFG

VISHAY

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 7.50 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL AND PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 15.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.3 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 13.5 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

BT151-500R

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013393273

NSN

5961-01-339-3273

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BT151-500R

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013393273

NSN

5961-01-339-3273

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 7.50 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL AND PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 15.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.3 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 13.5 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

CAT18315

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013393273

NSN

5961-01-339-3273

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CAT18315

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013393273

NSN

5961-01-339-3273

MFG

NICE CTI SYSTEMS UK LTD

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 7.50 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL AND PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 15.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.3 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 13.5 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

114SEB147

TRANSISTOR

NSN, MFG P/N

5961013393841

NSN

5961-01-339-3841

View More Info

114SEB147

TRANSISTOR

NSN, MFG P/N

5961013393841

NSN

5961-01-339-3841

MFG

SOLITRON DEVICES INC.

P108177

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393842

NSN

5961-01-339-3842

View More Info

P108177

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013393842

NSN

5961-01-339-3842

MFG

ILLINOIS TOOL WORKS INC. DBA MAGNAFLUX