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5961-01-317-1941
20 Products
BZX79C3V6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171941
NSN
5961-01-317-1941
MFG
BRITISH SAROZAL LTD
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AH
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -0.5 TO 0.5
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PT8822
TRANSISTOR
NSN, MFG P/N
5961013168418
NSN
5961-01-316-8418
MFG
POINTER INC
Description
III PURCHASE DESCRIPTION IDENTIFICATION: 58507-SRF5082
Related Searches:
91612041
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013168419
NSN
5961-01-316-8419
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.032 INCHES NOMINAL
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
H1601-18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013168419
NSN
5961-01-316-8419
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.032 INCHES NOMINAL
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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0230819K00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013168591
NSN
5961-01-316-8591
0230819K00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013168591
NSN
5961-01-316-8591
MFG
MBDA FRANCE
Description
OVERALL HEIGHT: 21.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 45.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 45.0 MILLIMETERS NOMINAL
Related Searches:
SKB15-12A2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013168591
NSN
5961-01-316-8591
SKB15-12A2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013168591
NSN
5961-01-316-8591
MFG
SEMIKRON INTL INC
Description
OVERALL HEIGHT: 21.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 45.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 45.0 MILLIMETERS NOMINAL
Related Searches:
507-41701
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013169526
NSN
5961-01-316-9526
507-41701
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013169526
NSN
5961-01-316-9526
MFG
LISTER PETTER AMERICAS INCORPORATED
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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717538174-009
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013171363
NSN
5961-01-317-1363
717538174-009
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013171363
NSN
5961-01-317-1363
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
III END ITEM IDENTIFICATION: LAN TARGETING POD
MOUNTING FACILITY TYPE AND QUANTITY: 4 SCREW SINGLE MOUNTING FACILITY
SPECIAL FEATURES: MTG BLOCK 1; HOLDS 8 DIODES
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5000509-001
TRANSISTOR
NSN, MFG P/N
5961013171936
NSN
5961-01-317-1936
MFG
PRECISION AEROSPACE CORPORATION DBA PRECISION ENGINE CONTROL
Description
TRANSISTOR
Related Searches:
LS313
TRANSISTOR
NSN, MFG P/N
5961013171936
NSN
5961-01-317-1936
MFG
LINEAR INTEGRATED SYSTEMS INC DBA LINEAR SYSTEMS
Description
TRANSISTOR
Related Searches:
58-005773-014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171938
NSN
5961-01-317-1938
58-005773-014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171938
NSN
5961-01-317-1938
MFG
THOMSON MULTIMEDIA BROADCAST SOLUTIONS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: 4920-01-125-2115
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MBR140P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171938
NSN
5961-01-317-1938
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: 4920-01-125-2115
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
5R4820-022-0007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171939
NSN
5961-01-317-1939
5R4820-022-0007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171939
NSN
5961-01-317-1939
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 68.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5524B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JAN1N5524B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171939
NSN
5961-01-317-1939
JAN1N5524B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171939
NSN
5961-01-317-1939
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 68.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5524B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JX1N5524B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171939
NSN
5961-01-317-1939
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 68.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5524B-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
111415-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171940
NSN
5961-01-317-1940
MFG
VARO LLC
Description
CURRENT RATING PER CHARACTERISTIC: 13.20 AMPERES MAXIMUM PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 MILLIWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 440.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
A310702
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171940
NSN
5961-01-317-1940
MFG
CONTROL FLOW INC. DBA WESTECH HEAVY MACHINERY DIV DIV WESTECH HEAVY MACHINER DIV
Description
CURRENT RATING PER CHARACTERISTIC: 13.20 AMPERES MAXIMUM PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 MILLIWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 440.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
PHP 440
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171940
NSN
5961-01-317-1940
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 13.20 AMPERES MAXIMUM PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 MILLIWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 440.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N5989B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171941
NSN
5961-01-317-1941
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AH
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -0.5 TO 0.5
Related Searches:
28371-224H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171941
NSN
5961-01-317-1941
28371-224H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013171941
NSN
5961-01-317-1941
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AH
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -0.5 TO 0.5
