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5961-01-274-1113

20 Products

1N914

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741113

NSN

5961-01-274-1113

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1N914

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741113

NSN

5961-01-274-1113

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

131795-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741115

NSN

5961-01-274-1115

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131795-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741115

NSN

5961-01-274-1115

MFG

TELEVIDEO SYSTEMS INC

1N4757A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741115

NSN

5961-01-274-1115

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1N4757A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741115

NSN

5961-01-274-1115

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

122022-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741116

NSN

5961-01-274-1116

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122022-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741116

NSN

5961-01-274-1116

MFG

TELEVIDEO SYSTEMS INC

1N4004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741116

NSN

5961-01-274-1116

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1N4004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741116

NSN

5961-01-274-1116

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

120469-00

TRANSISTOR

NSN, MFG P/N

5961012741513

NSN

5961-01-274-1513

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120469-00

TRANSISTOR

NSN, MFG P/N

5961012741513

NSN

5961-01-274-1513

MFG

TELEVIDEO SYSTEMS INC

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N2222

TRANSISTOR

NSN, MFG P/N

5961012741513

NSN

5961-01-274-1513

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2N2222

TRANSISTOR

NSN, MFG P/N

5961012741513

NSN

5961-01-274-1513

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

241301-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741516

NSN

5961-01-274-1516

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241301-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741516

NSN

5961-01-274-1516

MFG

TELEVIDEO SYSTEMS INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.072 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

MR856

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741516

NSN

5961-01-274-1516

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MR856

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741516

NSN

5961-01-274-1516

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.072 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

1304-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741517

NSN

5961-01-274-1517

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1304-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012741517

NSN

5961-01-274-1517

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR AND 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

QSCH-0910

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961012741518

NSN

5961-01-274-1518

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QSCH-0910

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961012741518

NSN

5961-01-274-1518

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL

5016080-001

TRANSISTOR

NSN, MFG P/N

5961012742209

NSN

5961-01-274-2209

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5016080-001

TRANSISTOR

NSN, MFG P/N

5961012742209

NSN

5961-01-274-2209

MFG

THALES TRAINING & SIMULATION LTD

89560

TRANSISTOR

NSN, MFG P/N

5961012742209

NSN

5961-01-274-2209

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89560

TRANSISTOR

NSN, MFG P/N

5961012742209

NSN

5961-01-274-2209

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

10121-7188

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012742210

NSN

5961-01-274-2210

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10121-7188

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012742210

NSN

5961-01-274-2210

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

100361-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012742211

NSN

5961-01-274-2211

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100361-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012742211

NSN

5961-01-274-2211

MFG

CIPHER DATA PRODUCTS INC CSC FACILITY

100052-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012742212

NSN

5961-01-274-2212

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100052-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012742212

NSN

5961-01-274-2212

MFG

CIPHER DATA PRODUCTS INC CSC FACILITY

452830-1

TRANSISTOR

NSN, MFG P/N

5961012743358

NSN

5961-01-274-3358

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452830-1

TRANSISTOR

NSN, MFG P/N

5961012743358

NSN

5961-01-274-3358

MFG

EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 452830-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: COUNTERMEASURES SET AN/ALQ-99
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 00752
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/376 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

795478-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012743359

NSN

5961-01-274-3359

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795478-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012743359

NSN

5961-01-274-3359

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: F/A-18 HORNET; AIRCRAFT, AIRLIFTER C-17A
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 795478-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

FJT1151

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012743359

NSN

5961-01-274-3359

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FJT1151

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012743359

NSN

5961-01-274-3359

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: F/A-18 HORNET; AIRCRAFT, AIRLIFTER C-17A
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 795478-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

5E4810/20-0003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012743360

NSN

5961-01-274-3360

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5E4810/20-0003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012743360

NSN

5961-01-274-3360

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 5E4810/20-0003
MANUFACTURERS CODE: 73030
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 1.037 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK