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5961-01-249-8681
20 Products
DT840827E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498681
NSN
5961-01-249-8681
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-130
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
IRF432
TRANSISTOR
NSN, MFG P/N
5961012497590
NSN
5961-01-249-7590
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
0048.0009.T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497953
NSN
5961-01-249-7953
0048.0009.T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497953
NSN
5961-01-249-7953
MFG
CAMERON TECHNOLOGIES US INC . DBA CAMERONS MEASUREMENT SYSTEMS DIV MEASUREMENT SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 0048.0009.T
MANUFACTURERS CODE: 05991
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
430-7979PC,CR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497953
NSN
5961-01-249-7953
430-7979PC,CR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497953
NSN
5961-01-249-7953
MFG
NORTHROP GRUMMAN SHIPBUILDING INC. DIV NEWPORT NEWS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 0048.0009.T
MANUFACTURERS CODE: 05991
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
0197.1003.T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497954
NSN
5961-01-249-7954
0197.1003.T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497954
NSN
5961-01-249-7954
MFG
CAMERON TECHNOLOGIES US INC . DBA CAMERONS MEASUREMENT SYSTEMS DIV MEASUREMENT SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 430-7979/PC CRN,CR5,CR6
MANUFACTURERS CODE: 43689
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
430-7979/PC CRN,CR5,CR6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497954
NSN
5961-01-249-7954
430-7979/PC CRN,CR5,CR6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012497954
NSN
5961-01-249-7954
MFG
NORTHROP GRUMMAN SHIPBUILDING INC. DIV NEWPORT NEWS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 430-7979/PC CRN,CR5,CR6
MANUFACTURERS CODE: 43689
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
925453-3B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498303
NSN
5961-01-249-8303
MFG
SEMITRONICS CORP
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 10.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM LIMITING CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.600 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 320.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SA9345
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498303
NSN
5961-01-249-8303
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 10.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM LIMITING CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.600 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 320.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
3179599
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012498304
NSN
5961-01-249-8304
3179599
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012498304
NSN
5961-01-249-8304
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 0.35 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 25.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 0.50 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.05 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-5882634 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
5882634
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012498304
NSN
5961-01-249-8304
5882634
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012498304
NSN
5961-01-249-8304
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.35 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 25.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 0.50 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.05 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-5882634 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
472-1484-001
TRANSISTOR
NSN, MFG P/N
5961012498678
NSN
5961-01-249-8678
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
SMX1484H1
TRANSISTOR
NSN, MFG P/N
5961012498678
NSN
5961-01-249-8678
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
1N6313
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498679
NSN
5961-01-249-8679
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-114
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
280-20045-114
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498679
NSN
5961-01-249-8679
280-20045-114
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498679
NSN
5961-01-249-8679
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-114
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
MT6817
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498679
NSN
5961-01-249-8679
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-114
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
1N4956
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498680
NSN
5961-01-249-8680
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-127
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
280-20045-127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498680
NSN
5961-01-249-8680
280-20045-127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498680
NSN
5961-01-249-8680
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-127
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
MT6780
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498680
NSN
5961-01-249-8680
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-127
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
1N823-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498681
NSN
5961-01-249-8681
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-130
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
280-20045-130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498681
NSN
5961-01-249-8681
280-20045-130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012498681
NSN
5961-01-249-8681
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-130
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
