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5961-01-221-2484
20 Products
04ES029-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012212484
NSN
5961-01-221-2484
MFG
RAYTHEON CO ESD LONG ISLAND DIV
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
1N4156
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012212484
NSN
5961-01-221-2484
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
04ES032-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012212486
NSN
5961-01-221-2486
04ES032-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012212486
NSN
5961-01-221-2486
MFG
RAYTHEON CO ESD LONG ISLAND DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
MCR649AP3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012212486
NSN
5961-01-221-2486
MCR649AP3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012212486
NSN
5961-01-221-2486
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
2051718-0701
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012212805
NSN
5961-01-221-2805
2051718-0701
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012212805
NSN
5961-01-221-2805
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
4JA421ED8AB1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012212805
NSN
5961-01-221-2805
4JA421ED8AB1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012212805
NSN
5961-01-221-2805
MFG
DEAN TECHNOLOGY INC. DBA CKE
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
48-869624
TRANSISTOR
NSN, MFG P/N
5961012213106
NSN
5961-01-221-3106
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.985 INCHES NOMINAL
Related Searches:
JANTX1N6109A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012213589
NSN
5961-01-221-3589
JANTX1N6109A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012213589
NSN
5961-01-221-3589
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6109A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.4 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
VOLTAGE T
Related Searches:
479-1463-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012213836
NSN
5961-01-221-3836
479-1463-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012213836
NSN
5961-01-221-3836
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER MGCS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
MG1323
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012213836
NSN
5961-01-221-3836
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER MGCS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
UTG1876
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012213836
NSN
5961-01-221-3836
MFG
MICRO USPD INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER MGCS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
479-1465-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012213837
NSN
5961-01-221-3837
479-1465-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012213837
NSN
5961-01-221-3837
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER MGCS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR CRITICAL HARDNESS ITEM
Related Searches:
04-111520-01
POLAR DISPLAY
NSN, MFG P/N
5961012216245
NSN
5961-01-221-6245
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
POLAR DISPLAY
Related Searches:
361-0003
TRANSISTOR
NSN, MFG P/N
5961012216314
NSN
5961-01-221-6314
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
TRANSISTOR
Related Searches:
2N4148
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012216525
NSN
5961-01-221-6525
2N4148
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012216525
NSN
5961-01-221-6525
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.250 AMPERES NOMINAL FORWARD CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 150.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 0.8 NOMINAL GATE TRIGGER VOLTAGE, DC
Related Searches:
850-72603-50
DIODE
NSN, MFG P/N
5961012216911
NSN
5961-01-221-6911
MFG
KATO ENGINEERING INC.
Description
DIODE
Related Searches:
352-1544-010
TRANSISTOR
NSN, MFG P/N
5961012217967
NSN
5961-01-221-7967
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MINIMUM
OVERALL WIDTH: 0.870 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 55.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 80.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO E
Related Searches:
MRF323
TRANSISTOR
NSN, MFG P/N
5961012217967
NSN
5961-01-221-7967
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MINIMUM
OVERALL WIDTH: 0.870 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 55.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 80.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO E
Related Searches:
151-0324-00
TRANSISTOR
NSN, MFG P/N
5961012217968
NSN
5961-01-221-7968
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
SJE915
TRANSISTOR
NSN, MFG P/N
5961012217968
NSN
5961-01-221-7968
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
