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5961-01-203-4101
20 Products
JANHCA1N4148-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012034101
NSN
5961-01-203-4101
JANHCA1N4148-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012034101
NSN
5961-01-203-4101
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANHCA1N4148-1
III END ITEM IDENTIFICATION: B-1B
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/116
SPEC/STD CONTROLLING DATA:
Related Searches:
MIS-19836/5
TRANSISTOR
NSN, MFG P/N
5961012034740
NSN
5961-01-203-4740
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT AND 400.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
DESIGN CONTROL REFERENCE: MIS-19836/5
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 18876
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.013 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 36.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 36.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
7547053P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035726
NSN
5961-01-203-5726
7547053P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035726
NSN
5961-01-203-5726
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0
Related Searches:
N0D368
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035726
NSN
5961-01-203-5726
MFG
MICRONETICS INC.
Description
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0
Related Searches:
KS19938L4
TRANSISTOR
NSN, MFG P/N
5961012035796
NSN
5961-01-203-5796
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM BASE TO EMITTER VOLTAGE, DC
Related Searches:
17373-1
TRANSISTOR
NSN, MFG P/N
5961012035798
NSN
5961-01-203-5798
MFG
L-3 COMMUNICATIONS CORPORATION DBA L-3 COMMUNICATIONS RCCS DIV RUGGEDIZED COMMAND & CONTROL SOLUTIONS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTX2N3868S
TRANSISTOR
NSN, MFG P/N
5961012035798
NSN
5961-01-203-5798
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
NH17373-1
TRANSISTOR
NSN, MFG P/N
5961012035798
NSN
5961-01-203-5798
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
405757
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035799
NSN
5961-01-203-5799
MFG
TARGET CORPORATION DBA TARGET
Description
CAPACITANCE RATING IN PICOFARADS: 2.7 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GC-1606-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035799
NSN
5961-01-203-5799
GC-1606-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035799
NSN
5961-01-203-5799
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CAPACITANCE RATING IN PICOFARADS: 2.7 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA-45165
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035799
NSN
5961-01-203-5799
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 2.7 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
JANTX1N6466
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035800
NSN
5961-01-203-5800
JANTX1N6466
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035800
NSN
5961-01-203-5800
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6466
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/551
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/551 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM REVERSE VOLTAGE, PEAK
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
167591
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035801
NSN
5961-01-203-5801
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 3.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.812 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
B759-100-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035801
NSN
5961-01-203-5801
B759-100-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035801
NSN
5961-01-203-5801
MFG
EDAL INDUSTRIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 3.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.812 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
PD5801
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035801
NSN
5961-01-203-5801
MFG
PD & E ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 3.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.812 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
167593
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035802
NSN
5961-01-203-5802
MFG
ARGENT INDUSTRIES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: EMORY S. LAND CLASS AS; SUPPLY CLASS AOE; TICONDEROGA CLASS CG (47); FORRESTAL CLASS CV; ARLEIGH BURKE CLASS DDG; TARAWA CLASS LHA; WASP CLASS LHD; NIMITZ CLASS CVN; LANDING SYSTEM AUTOMATIC CARRIER, DUAL CHANNEL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.812 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
B759-120-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035802
NSN
5961-01-203-5802
B759-120-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035802
NSN
5961-01-203-5802
MFG
EDAL INDUSTRIES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: EMORY S. LAND CLASS AS; SUPPLY CLASS AOE; TICONDEROGA CLASS CG (47); FORRESTAL CLASS CV; ARLEIGH BURKE CLASS DDG; TARAWA CLASS LHA; WASP CLASS LHD; NIMITZ CLASS CVN; LANDING SYSTEM AUTOMATIC CARRIER, DUAL CHANNEL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.812 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
PD5802
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035802
NSN
5961-01-203-5802
MFG
PD & E ELECTRONICS LLC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: EMORY S. LAND CLASS AS; SUPPLY CLASS AOE; TICONDEROGA CLASS CG (47); FORRESTAL CLASS CV; ARLEIGH BURKE CLASS DDG; TARAWA CLASS LHA; WASP CLASS LHD; NIMITZ CLASS CVN; LANDING SYSTEM AUTOMATIC CARRIER, DUAL CHANNEL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.812 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REVERSE VOLTAGE, DC
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813CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035804
NSN
5961-01-203-5804
MFG
AT AND T MICROELECTRONICS INC READING WKS
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL EXTERNAL SURFACES SILVER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -3.0 TO 3.0
Related Searches:
G645032
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012035804
NSN
5961-01-203-5804
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL EXTERNAL SURFACES SILVER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -3.0 TO 3.0
