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5961-01-191-5415
20 Products
8500064-106
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011915415
NSN
5961-01-191-5415
8500064-106
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011915415
NSN
5961-01-191-5415
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
DESIGN CONTROL REFERENCE: 8500064-106
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8B
MANUFACTURERS CODE: 07187
THE MANUFACTURERS DATA:
Related Searches:
A13556
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011915704
NSN
5961-01-191-5704
A13556
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011915704
NSN
5961-01-191-5704
MFG
AVTRON AEROSPACE INC.
Description
DESIGN CONTROL REFERENCE: A13556
III END ITEM IDENTIFICATION: GROUND SUPPORT EQUIPMENT F-18 AIRCRAFT
MANUFACTURERS CODE: 01014
SPECIAL FEATURES: COGNIZANT SERVICE:USN
THE MANUFACTURERS DATA:
Related Searches:
615464-905
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011916850
NSN
5961-01-191-6850
615464-905
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011916850
NSN
5961-01-191-6850
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: AN VRC-83V1,2
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
UM4302A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011916850
NSN
5961-01-191-6850
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: AN VRC-83V1,2
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.130 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
411259-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011916851
NSN
5961-01-191-6851
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 250.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: B1B PACER BEE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL LUGS PLATED SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.990 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 00752-411259 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SA9738
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011916851
NSN
5961-01-191-6851
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 250.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: B1B PACER BEE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL LUGS PLATED SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.990 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 00752-411259 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
UES302W
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011916851
NSN
5961-01-191-6851
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 250.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: B1B PACER BEE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL LUGS PLATED SILVER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 0.990 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 00752-411259 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
LM103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011917362
NSN
5961-01-191-7362
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SM-C-706926-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011917362
NSN
5961-01-191-7362
SM-C-706926-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011917362
NSN
5961-01-191-7362
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4513082
TRANSISTOR
NSN, MFG P/N
5961011917583
NSN
5961-01-191-7583
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
POWER RATING PER CHARACTERISTIC: 13.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL COLLECTOR SUPPLY VOLTAGE
Related Searches:
MSC74053
TRANSISTOR
NSN, MFG P/N
5961011917583
NSN
5961-01-191-7583
MFG
MICROWAVE SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
POWER RATING PER CHARACTERISTIC: 13.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL COLLECTOR SUPPLY VOLTAGE
Related Searches:
4513087
TRANSISTOR
NSN, MFG P/N
5961011917584
NSN
5961-01-191-7584
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
POWER RATING PER CHARACTERISTIC: 1.7 WATTS MINIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL COLLECTOR SUPPLY VOLTAGE
Related Searches:
MSC74554
TRANSISTOR
NSN, MFG P/N
5961011917584
NSN
5961-01-191-7584
MFG
MICROWAVE SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
POWER RATING PER CHARACTERISTIC: 1.7 WATTS MINIMUM TOTAL POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL COLLECTOR SUPPLY VOLTAGE
Related Searches:
000-8005-719
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011919450
NSN
5961-01-191-9450
000-8005-719
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011919450
NSN
5961-01-191-9450
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 225.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
Related Searches:
26141-929-00-5 ITEM 066
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011919450
NSN
5961-01-191-9450
26141-929-00-5 ITEM 066
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011919450
NSN
5961-01-191-9450
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 225.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
Related Searches:
TR-166
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011919450
NSN
5961-01-191-9450
TR-166
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011919450
NSN
5961-01-191-9450
MFG
BE AEROSPACE INC . DBA GALLEY PRODUCTS GROUP DIV LENEXA BUSINESS UNIT
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 225.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
Related Searches:
VQ1000J
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011919450
NSN
5961-01-191-9450
VQ1000J
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011919450
NSN
5961-01-191-9450
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 225.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
Related Searches:
VN1710M
TRANSISTOR
NSN, MFG P/N
5961011919710
NSN
5961-01-191-9710
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-237
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MAXIMUM
OVERALL WIDTH: 0.206 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 170.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
0270850-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011919739
NSN
5961-01-191-9739
0270850-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011919739
NSN
5961-01-191-9739
MFG
INDUSTRIAL PARTS CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
19844454
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011919739
NSN
5961-01-191-9739
19844454
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011919739
NSN
5961-01-191-9739
MFG
GENERAL MOTORS CORP CHEVROLET MOTOR DIV SPECIAL PRODUCTS DEPT
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
