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5961-01-186-2369

20 Products

SM-C-801069-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011862369

NSN

5961-01-186-2369

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SM-C-801069-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011862369

NSN

5961-01-186-2369

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED HOLE AND THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 1.900 INCHES MAXIMUM
OVERALL LENGTH: 0.730 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 NOMINAL WORKING PEAK REVERSE VOLTAGE

SA8767

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011862369

NSN

5961-01-186-2369

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SA8767

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011862369

NSN

5961-01-186-2369

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED HOLE AND THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 1.900 INCHES MAXIMUM
OVERALL LENGTH: 0.730 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 NOMINAL WORKING PEAK REVERSE VOLTAGE

2N6742

TRANSISTOR

NSN, MFG P/N

5961011862761

NSN

5961-01-186-2761

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2N6742

TRANSISTOR

NSN, MFG P/N

5961011862761

NSN

5961-01-186-2761

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

HXTR-6102

TRANSISTOR

NSN, MFG P/N

5961011862761

NSN

5961-01-186-2761

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HXTR-6102

TRANSISTOR

NSN, MFG P/N

5961011862761

NSN

5961-01-186-2761

MFG

HEWLETT PACKARD CO

JAN1N4488

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011863810

NSN

5961-01-186-3810

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JAN1N4488

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011863810

NSN

5961-01-186-3810

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 2.80 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4488
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 91.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

T6401D

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011863895

NSN

5961-01-186-3895

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T6401D

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011863895

NSN

5961-01-186-3895

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.510 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED

145530-21

TRANSISTOR

NSN, MFG P/N

5961011863896

NSN

5961-01-186-3896

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145530-21

TRANSISTOR

NSN, MFG P/N

5961011863896

NSN

5961-01-186-3896

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING PAD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

145530-22

TRANSISTOR

NSN, MFG P/N

5961011863897

NSN

5961-01-186-3897

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145530-22

TRANSISTOR

NSN, MFG P/N

5961011863897

NSN

5961-01-186-3897

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING PAD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

145530-23

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011863898

NSN

5961-01-186-3898

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145530-23

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011863898

NSN

5961-01-186-3898

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING PAD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC

145530-25

TRANSISTOR

NSN, MFG P/N

5961011863899

NSN

5961-01-186-3899

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145530-25

TRANSISTOR

NSN, MFG P/N

5961011863899

NSN

5961-01-186-3899

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING PAD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

09-109474-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011863901

NSN

5961-01-186-3901

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09-109474-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011863901

NSN

5961-01-186-3901

MFG

STANDARD POWER INC

1000643600

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011863902

NSN

5961-01-186-3902

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1000643600

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011863902

NSN

5961-01-186-3902

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

16

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011863905

NSN

5961-01-186-3905

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16

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011863905

NSN

5961-01-186-3905

MFG

LEWIS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.412 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

MCR81-20

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011863920

NSN

5961-01-186-3920

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MCR81-20

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011863920

NSN

5961-01-186-3920

MFG

FREESCALE SEMICONDUCTOR INC.

PI-32440-SKKH5512

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011863921

NSN

5961-01-186-3921

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PI-32440-SKKH5512

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011863921

NSN

5961-01-186-3921

MFG

CHROMALOX INC DBA OGDEN DIV CHROMALOX INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.420 INCHES NOMINAL
OVERALL LENGTH: 3.625 INCHES NOMINAL
OVERALL WIDTH: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 3 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REVERSE VOLTAGE, PEAK

Z1470

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961011863984

NSN

5961-01-186-3984

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Z1470

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961011863984

NSN

5961-01-186-3984

MFG

UNITED STATES DEPARTMENT OF THE NAVY DBA NAVAL SURFACE WARFARE CENTER

Description

DESIGN CONTROL REFERENCE: Z1470
MANUFACTURERS CODE: 12255
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152

1N3087R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011865285

NSN

5961-01-186-5285

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1N3087R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011865285

NSN

5961-01-186-5285

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 17.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: REVERSE POLARITY
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-30
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 5.015 INCHES MINIMUM AND 5.685 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNTHREADED HOLE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 240.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

3000-107

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011865286

NSN

5961-01-186-5286

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3000-107

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011865286

NSN

5961-01-186-5286

MFG

FLUKE CORPORATION

244718-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011865290

NSN

5961-01-186-5290

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244718-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011865290

NSN

5961-01-186-5290

MFG

DATA PRODUCTS CORP

A430PD

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011865292

NSN

5961-01-186-5292

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A430PD

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011865292

NSN

5961-01-186-5292

MFG

BAE SYSTEMS CONTROLS INC.