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5961-01-181-2270
20 Products
SA7901
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812270
NSN
5961-01-181-2270
SA7901
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812270
NSN
5961-01-181-2270
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SPECIAL FEATURES: SILICON DIODE BRIDGE ASSEMBLY;FULL WAVE;TEMP RANGE M55 DEG C TO 150 DEG C;0.650 IN. LG;0.450 IN. W;0.210 IN. H
Related Searches:
20218
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011811200
NSN
5961-01-181-1200
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 20218
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL TEST FEATURES: TESTED PER BASE TEN SYSTEMS DWG 20218
TERMINAL CIRCLE DIAMETER: 0.053 INCHES MAXIMUM
TERMINAL LENGTH: 1.010 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MR751
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011811200
NSN
5961-01-181-1200
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 20218
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL TEST FEATURES: TESTED PER BASE TEN SYSTEMS DWG 20218
TERMINAL CIRCLE DIAMETER: 0.053 INCHES MAXIMUM
TERMINAL LENGTH: 1.010 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1855-0404
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811503
NSN
5961-01-181-1503
1855-0404
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811503
NSN
5961-01-181-1503
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III END ITEM IDENTIFICATION: 6625-01-047-7468 OSCILLOSCOPE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.186 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 PIN
Related Searches:
SF83013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811503
NSN
5961-01-181-1503
SF83013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811503
NSN
5961-01-181-1503
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III END ITEM IDENTIFICATION: 6625-01-047-7468 OSCILLOSCOPE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.186 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 PIN
Related Searches:
269838
TRANSISTOR
NSN, MFG P/N
5961011811675
NSN
5961-01-181-1675
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD FINISH GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
A2436
TRANSISTOR
NSN, MFG P/N
5961011811675
NSN
5961-01-181-1675
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD FINISH GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
2N3838J
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811676
NSN
5961-01-181-1676
2N3838J
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811676
NSN
5961-01-181-1676
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 125.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-89
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION ONFIGURATION FIRST TRANSISTOR NPN AND SECOND TRANSISTOR PNP
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR
Related Searches:
H980004-001C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811676
NSN
5961-01-181-1676
H980004-001C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811676
NSN
5961-01-181-1676
MFG
RAYTHEON COMPANY
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 125.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-89
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION ONFIGURATION FIRST TRANSISTOR NPN AND SECOND TRANSISTOR PNP
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR
Related Searches:
MC2N3838JC
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811676
NSN
5961-01-181-1676
MC2N3838JC
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011811676
NSN
5961-01-181-1676
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 125.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-89
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: INTERNAL JUNCTION ONFIGURATION FIRST TRANSISTOR NPN AND SECOND TRANSISTOR PNP
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR
Related Searches:
652-1237
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812114
NSN
5961-01-181-2114
652-1237
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812114
NSN
5961-01-181-2114
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 2.000 INCHES NOMINAL
OVERALL LENGTH: 1.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
720696-30
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812114
NSN
5961-01-181-2114
720696-30
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812114
NSN
5961-01-181-2114
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 2.000 INCHES NOMINAL
OVERALL LENGTH: 1.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
SA7897
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812114
NSN
5961-01-181-2114
SA7897
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812114
NSN
5961-01-181-2114
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 2.000 INCHES NOMINAL
OVERALL LENGTH: 1.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
720622-22
SEMICONDUCTOR
NSN, MFG P/N
5961011812115
NSN
5961-01-181-2115
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR
Related Searches:
QLMP0388
SEMICONDUCTOR
NSN, MFG P/N
5961011812115
NSN
5961-01-181-2115
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR
Related Searches:
OS 95973
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011812235
NSN
5961-01-181-2235
MFG
TAYLOR HOBSON LTD
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 2.195 INCHES MINIMUM AND 2.215 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 40.0 NOMINAL REVERSE VOLTAGE, PEAK AND 28.0 NOMINAL REVERSE VOLTAGE, TOTAL RMS AND 40.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
VSK140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011812235
NSN
5961-01-181-2235
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 2.195 INCHES MINIMUM AND 2.215 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 40.0 NOMINAL REVERSE VOLTAGE, PEAK AND 28.0 NOMINAL REVERSE VOLTAGE, TOTAL RMS AND 40.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
VSK540
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011812236
NSN
5961-01-181-2236
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.048 INCHES MINIMUM AND 0.052 INCHES MAXIMUM
TERMINAL LENGTH: 2.360 INCHES MINIMUM AND 2.380 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 40.0 NOMINAL REVERSE VOLTAGE, PEAK AND 28.0 NOMINAL REVERSE VOLTAGE, TOTAL RMS AND 40.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
625-1223
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812270
NSN
5961-01-181-2270
625-1223
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812270
NSN
5961-01-181-2270
MFG
MICRO USPD INC
Description
SPECIAL FEATURES: SILICON DIODE BRIDGE ASSEMBLY;FULL WAVE;TEMP RANGE M55 DEG C TO 150 DEG C;0.650 IN. LG;0.450 IN. W;0.210 IN. H
Related Searches:
720696-33
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812270
NSN
5961-01-181-2270
720696-33
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011812270
NSN
5961-01-181-2270
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SPECIAL FEATURES: SILICON DIODE BRIDGE ASSEMBLY;FULL WAVE;TEMP RANGE M55 DEG C TO 150 DEG C;0.650 IN. LG;0.450 IN. W;0.210 IN. H
