My Quote Request
No products added yet
5961-01-156-5796
20 Products
ECG 5437
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011565796
NSN
5961-01-156-5796
ECG 5437
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011565796
NSN
5961-01-156-5796
MFG
PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 35.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 0.20 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
NTE5437
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011565796
NSN
5961-01-156-5796
NTE5437
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011565796
NSN
5961-01-156-5796
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 35.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 0.20 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
S2060B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011565796
NSN
5961-01-156-5796
S2060B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011565796
NSN
5961-01-156-5796
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 35.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 0.20 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
2223107-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
2223107-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER BENDIX NAVIGATION AND CONTROL SYSTEMS
Description
OVERALL HEIGHT: 1.305 INCHES MINIMUM
OVERALL LENGTH: 0.920 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
226-5669
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
226-5669
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
MFG
RS COMPONENTS LIMITED
Description
OVERALL HEIGHT: 1.305 INCHES MINIMUM
OVERALL LENGTH: 0.920 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
48-84621E01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
48-84621E01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
OVERALL HEIGHT: 1.305 INCHES MINIMUM
OVERALL LENGTH: 0.920 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
KBU8G
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
KBU8G
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
MFG
GENERAL SEMICONDUCTOR INC
Description
OVERALL HEIGHT: 1.305 INCHES MINIMUM
OVERALL LENGTH: 0.920 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
MDA970-5
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
MDA970-5
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
MFG
FREESCALE SEMICONDUCTOR INC.
Description
OVERALL HEIGHT: 1.305 INCHES MINIMUM
OVERALL LENGTH: 0.920 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
RS404L
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
RS404L
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011565936
NSN
5961-01-156-5936
MFG
DIODES INC
Description
OVERALL HEIGHT: 1.305 INCHES MINIMUM
OVERALL LENGTH: 0.920 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
469491-2
CELL,PHOTO
NSN, MFG P/N
5961011566793
NSN
5961-01-156-6793
MFG
MILTOPE CORPORATION DBA VT MILTOPE
Description
III END ITEM IDENTIFICATION: USED ON RECORDER,REPRODUCER ANGSH46
Related Searches:
500107
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011566984
NSN
5961-01-156-6984
MFG
PIONEER MAGNETICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.438 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1855-0227
TRANSISTOR
NSN, MFG P/N
5961011567024
NSN
5961-01-156-7024
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
TRANSISTOR
Related Searches:
SPF683
TRANSISTOR
NSN, MFG P/N
5961011567024
NSN
5961-01-156-7024
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
352-8531-020
TRANSISTOR
NSN, MFG P/N
5961011567027
NSN
5961-01-156-7027
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.847 INCHES MAXIMUM
OVERALL LENGTH: 1.470 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 320.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 110.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 3.6 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SRF3513P
TRANSISTOR
NSN, MFG P/N
5961011567027
NSN
5961-01-156-7027
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.847 INCHES MAXIMUM
OVERALL LENGTH: 1.470 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 320.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 110.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 3.6 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
352-7901-010
TRANSISTOR
NSN, MFG P/N
5961011567028
NSN
5961-01-156-7028
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.970 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
41007
TRANSISTOR
NSN, MFG P/N
5961011567028
NSN
5961-01-156-7028
MFG
ACRIAN INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.970 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
BF25-35
TRANSISTOR
NSN, MFG P/N
5961011567028
NSN
5961-01-156-7028
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.970 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SRF3262
TRANSISTOR
NSN, MFG P/N
5961011567028
NSN
5961-01-156-7028
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.970 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
1202554-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011567029
NSN
5961-01-156-7029
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CAPACITANCE RATING IN PICOFARADS: 20.0 NOMINAL
FUNCTION FOR WHICH DESIGNED: DETECTOR
INCLOSURE MATERIAL: GLASS OR METAL OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.310 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 CONNECTOR, COAXIAL
TEST DATA DOCUMENT: 53711-5399645 DRAWING
