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5961-01-143-5000
20 Products
SR3452
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011435000
NSN
5961-01-143-5000
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
16128-001
TRANSISTOR
NSN, MFG P/N
5961011433636
NSN
5961-01-143-3636
MFG
DYNALEC CORPORATION
Description
TRANSISTOR
Related Searches:
JAN2N2609
TRANSISTOR
NSN, MFG P/N
5961011433636
NSN
5961-01-143-3636
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
TRANSISTOR
Related Searches:
B-390-7009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433637
NSN
5961-01-143-3637
B-390-7009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433637
NSN
5961-01-143-3637
MFG
BRUNSWICK CORPORATION DBA MERCURY MARINE DIV MERCURY MARINE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N6438
TRANSISTOR
NSN, MFG P/N
5961011433713
NSN
5961-01-143-3713
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
6999ED969
TRANSISTOR
NSN, MFG P/N
5961011433713
NSN
5961-01-143-3713
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
TRANSISTOR
Related Searches:
STA7616
TRANSISTOR
NSN, MFG P/N
5961011433713
NSN
5961-01-143-3713
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
TRANSISTOR
Related Searches:
VH148X
DIODE ASSY
NSN, MFG P/N
5961011433965
NSN
5961-01-143-3965
MFG
MICROPAC INDUSTRIES INC.
Description
DIODE ASSY
Related Searches:
VE48X
DIODE
NSN, MFG P/N
5961011433966
NSN
5961-01-143-3966
MFG
MICROPAC INDUSTRIES INC.
Description
DIODE
Related Searches:
VE08X
DIODE ASSY
NSN, MFG P/N
5961011433967
NSN
5961-01-143-3967
MFG
MICROPAC INDUSTRIES INC.
Description
DIODE ASSY
Related Searches:
VB40X
DIODE
NSN, MFG P/N
5961011433968
NSN
5961-01-143-3968
MFG
MICROPAC INDUSTRIES INC.
Description
DIODE
Related Searches:
10688350
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011434474
NSN
5961-01-143-4474
10688350
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011434474
NSN
5961-01-143-4474
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
MAJOR COMPONENTS: DIODE 4; TERMINAL BOARD 1
Related Searches:
152-0175-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434998
NSN
5961-01-143-4998
152-0175-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434998
NSN
5961-01-143-4998
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZG-5021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434998
NSN
5961-01-143-4998
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
152-0720-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434999
NSN
5961-01-143-4999
152-0720-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434999
NSN
5961-01-143-4999
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 12.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 80.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.500 INCHES MAXIMUM
OVERALL LENGTH: 21.700 INCHES MAXIMUM
OVERALL WIDTH: 10.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 7.600 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
BYW29-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434999
NSN
5961-01-143-4999
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 12.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 80.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.500 INCHES MAXIMUM
OVERALL LENGTH: 21.700 INCHES MAXIMUM
OVERALL WIDTH: 10.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 7.600 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
BYW29/100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434999
NSN
5961-01-143-4999
MFG
BRITISH SAROZAL LTD
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 12.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 80.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.500 INCHES MAXIMUM
OVERALL LENGTH: 21.700 INCHES MAXIMUM
OVERALL WIDTH: 10.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 7.600 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
D22-0017-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434999
NSN
5961-01-143-4999
D22-0017-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434999
NSN
5961-01-143-4999
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 12.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 80.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.500 INCHES MAXIMUM
OVERALL LENGTH: 21.700 INCHES MAXIMUM
OVERALL WIDTH: 10.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 7.600 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
VHE1402
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011434999
NSN
5961-01-143-4999
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 12.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 80.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.500 INCHES MAXIMUM
OVERALL LENGTH: 21.700 INCHES MAXIMUM
OVERALL WIDTH: 10.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 7.600 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
152-0742-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011435000
NSN
5961-01-143-5000
152-0742-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011435000
NSN
5961-01-143-5000
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
