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5961-01-130-3497
20 Products
1086965P1
TRANSISTOR
NSN, MFG P/N
5961011303497
NSN
5961-01-130-3497
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
PD2893
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011299979
NSN
5961-01-129-9979
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1240-00-348-8436
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
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1853048-170
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300038
NSN
5961-01-130-0038
1853048-170
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300038
NSN
5961-01-130-0038
MFG
NAVAL SEA SYSTEMS COMMAND
Description
III END ITEM IDENTIFICATION: HULL OBRP 03950
MAJOR COMPONENTS: DIODE 11
Related Searches:
66506-011
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300038
NSN
5961-01-130-0038
66506-011
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300038
NSN
5961-01-130-0038
MFG
DYNALEC CORPORATION
Description
III END ITEM IDENTIFICATION: HULL OBRP 03950
MAJOR COMPONENTS: DIODE 11
Related Searches:
803-4680149-11
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300038
NSN
5961-01-130-0038
803-4680149-11
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300038
NSN
5961-01-130-0038
MFG
NAVAL SHIP SYSTEMS COMMAND
Description
III END ITEM IDENTIFICATION: HULL OBRP 03950
MAJOR COMPONENTS: DIODE 11
Related Searches:
30C5318-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300039
NSN
5961-01-130-0039
30C5318-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300039
NSN
5961-01-130-0039
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
DESIGN CONTROL REFERENCE: 30C5318-1
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE,DIODE 14; TERMINAL BOARD 2; ELECTRICAL CONNECTOR RECEPTACLE 1
MANUFACTURERS CODE: 04801
MOUNTING CONFIGURATION: FOUR 0.250 IN. DIA. MOUNTING HOLES
OVERALL HEIGHT: 1.750 INCHES NOMINAL
OVERALL LENGTH: 5.750 INCHES NOMINAL
OVERALL WIDTH: 2.000 INCHES NOMINAL
SPECIAL FEATURES: BOARDS TO BE POTTED INSIDE CASE
THE MANUFACTURERS DATA:
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336169-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300799
NSN
5961-01-130-0799
336169-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011300799
NSN
5961-01-130-0799
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 336169-1
MAJOR COMPONENTS: PRINTED WIRING BOARD 1; PHOTO SEMICONDUCTOR DEVICE 2
MANUFACTURERS CODE: 96214
THE MANUFACTURERS DATA:
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14012594-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301053
NSN
5961-01-130-1053
14012594-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301053
NSN
5961-01-130-1053
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.139 INCHES NOMINAL
OVERALL LENGTH: 0.345 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.039 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
TERMINAL LENGTH: 1.091 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
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14012989-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301053
NSN
5961-01-130-1053
14012989-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301053
NSN
5961-01-130-1053
MFG
SAGEM TELECOMMUNICATIONS
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.139 INCHES NOMINAL
OVERALL LENGTH: 0.345 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.039 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
TERMINAL LENGTH: 1.091 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
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1N4971
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301053
NSN
5961-01-130-1053
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.139 INCHES NOMINAL
OVERALL LENGTH: 0.345 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.039 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
TERMINAL LENGTH: 1.091 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
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C8943-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301054
NSN
5961-01-130-1054
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: F16AIRCOMBFIT 81755
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.670 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 0.890 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
TEST DATA DOCUMENT: 81755-C8943 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.5 MAXIMUM REVERSE VOLTAGE, DC
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GZ70825D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301054
NSN
5961-01-130-1054
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: F16AIRCOMBFIT 81755
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.670 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 0.890 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
TEST DATA DOCUMENT: 81755-C8943 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.5 MAXIMUM REVERSE VOLTAGE, DC
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7451BLUEMATCH
TRANSISTOR
NSN, MFG P/N
5961011301674
NSN
5961-01-130-1674
MFG
INTEGRAND RESEARCH CORP
Description
TRANSISTOR
Related Searches:
308E2009-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301675
NSN
5961-01-130-1675
308E2009-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301675
NSN
5961-01-130-1675
MFG
THE BOEING COMPANY DBA BOEING
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BP15933
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011301675
NSN
5961-01-130-1675
MFG
BURKE PRODUCTS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN2N6286
TRANSISTOR
NSN, MFG P/N
5961011301885
NSN
5961-01-130-1885
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: -20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -0.50 AMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6286
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SATELLITE COM
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/505
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.328 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/505 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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0901-0048
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011301950
NSN
5961-01-130-1950
0901-0048
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011301950
NSN
5961-01-130-1950
MFG
MONITEK TECHNOLOGIES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES TOTAL POWER DISSIPATION
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 SOURCE SUPPLY VOLTAGE
DESIGN CONTROL REFERENCE: C901-0048-00
III END ITEM IDENTIFICATION: ASSEMBLY CONTROL MODULE NO. 1071 FOR 10-GPM VACUUM GRAVITY/COALESCER OIL-WATER SEPARATOR ONBOARD 270 FT WMEC COAST GUARD VESSELS
MANUFACTURERS CODE: 52643
MATERIAL: SILICON
MOUNTING METHOD: PLUG-IN
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPECIAL FEATURES: FULL WAVE RECTIFIED INPUT VOLTAGE,6 AMPERES RMS MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
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4040022-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011302599
NSN
5961-01-130-2599
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 4040022-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19133
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.037 INCHES MINIMUM AND 0.042 INCHES MAXIMUM
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
MILS19500/477
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011302599
NSN
5961-01-130-2599
MILS19500/477
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011302599
NSN
5961-01-130-2599
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 4040022-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19133
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.037 INCHES MINIMUM AND 0.042 INCHES MAXIMUM
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SS41224
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011302599
NSN
5961-01-130-2599
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 4040022-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19133
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.037 INCHES MINIMUM AND 0.042 INCHES MAXIMUM
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
