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5961-01-114-9959
20 Products
DMS 86014B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011149959
NSN
5961-01-114-9959
DMS 86014B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011149959
NSN
5961-01-114-9959
MFG
DLA LAND AND MARITIME
Description
OVERALL HEIGHT: 0.310 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SPECIAL FEATURES: 2 DIODES ENCAPSULATED; 600 V; 3 LEAD TYPE TERMINALS
Related Searches:
406214
TRANSISTOR
NSN, MFG P/N
5961011150887
NSN
5961-01-115-0887
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TRANSPONDER SUPPRESSOR SYSTEM, DIRCTIONAL (ATCBI) (FA9875)
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.396 INCHES NOMINAL
OVERALL WIDTH: 0.396 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 390.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
60027
TRANSISTOR
NSN, MFG P/N
5961011150887
NSN
5961-01-115-0887
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TRANSPONDER SUPPRESSOR SYSTEM, DIRCTIONAL (ATCBI) (FA9875)
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.396 INCHES NOMINAL
OVERALL WIDTH: 0.396 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 390.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
3045209-078-101
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011151287
NSN
5961-01-115-1287
3045209-078-101
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011151287
NSN
5961-01-115-1287
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS
Description
MANUFACTURERS CODE: 99696
MFR SOURCE CONTROLLING REFERENCE: 3045209-078-101
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: INSULATIONS SURFACE TREATED FOR ONDAVILITY AND AC VOLTAGE RATING 6000 AT SEA LEVEL, DC VOLTAGE RATING 13000 AT SEA LEVEL
Related Searches:
SA2359A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011151287
NSN
5961-01-115-1287
SA2359A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011151287
NSN
5961-01-115-1287
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
MANUFACTURERS CODE: 99696
MFR SOURCE CONTROLLING REFERENCE: 3045209-078-101
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: INSULATIONS SURFACE TREATED FOR ONDAVILITY AND AC VOLTAGE RATING 6000 AT SEA LEVEL, DC VOLTAGE RATING 13000 AT SEA LEVEL
Related Searches:
3045209-138-101
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011151288
NSN
5961-01-115-1288
3045209-138-101
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011151288
NSN
5961-01-115-1288
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 FORWARD VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 99696
MFR SOURCE CONTROLLING REFERENCE: 3045209-138-101
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
SA2909
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011151288
NSN
5961-01-115-1288
SA2909
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011151288
NSN
5961-01-115-1288
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 FORWARD VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 99696
MFR SOURCE CONTROLLING REFERENCE: 3045209-138-101
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
501072299
RECTIFIER ASSEMBLY
NSN, MFG P/N
5961011151790
NSN
5961-01-115-1790
MFG
EATON CORPORATION
Description
RECTIFIER ASSEMBLY
Related Searches:
351-1263-010
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011151865
NSN
5961-01-115-1865
351-1263-010
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011151865
NSN
5961-01-115-1865
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
979726-108
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011151865
NSN
5961-01-115-1865
MFG
RAYTHEON SERVICE CO LOGISTICS SUPPORT CENTER
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
H11A10
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011151865
NSN
5961-01-115-1865
MFG
INTERSIL CORPORATION
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
3N160
TRANSISTOR
NSN, MFG P/N
5961011152048
NSN
5961-01-115-2048
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE
Related Searches:
3954
TRANSISTOR
NSN, MFG P/N
5961011152376
NSN
5961-01-115-2376
MFG
CROWN AUDIO INC. DBA CROWN INTERNATIONAL
Description
TRANSISTOR
Related Searches:
4647
TRANSISTOR
NSN, MFG P/N
5961011152377
NSN
5961-01-115-2377
MFG
CROWN AUDIO INC. DBA CROWN INTERNATIONAL
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.172 INCHES NOMINAL
OVERALL LENGTH: 1.203 INCHES NOMINAL
OVERALL WIDTH: 0.391 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
4152
TRANSISTOR
NSN, MFG P/N
5961011152378
NSN
5961-01-115-2378
MFG
CROWN AUDIO INC. DBA CROWN INTERNATIONAL
Description
TRANSISTOR
Related Searches:
499-014-017
TRANSISTOR
NSN, MFG P/N
5961011152378
NSN
5961-01-115-2378
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
TRANSISTOR
Related Searches:
516-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011152379
NSN
5961-01-115-2379
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
7903079-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011152379
NSN
5961-01-115-2379
7903079-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011152379
NSN
5961-01-115-2379
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
4430
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011152381
NSN
5961-01-115-2381
MFG
CROWN AUDIO INC. DBA CROWN INTERNATIONAL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
22D1246
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011152436
NSN
5961-01-115-2436
22D1246
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011152436
NSN
5961-01-115-2436
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
SEMICONDUCTOR DEVICE,THYRISTOR
