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5961-01-093-2578
20 Products
ST-1431
TRANSISTOR
NSN, MFG P/N
5961010932578
NSN
5961-01-093-2578
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-SM-B-416325 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JAN1N5258B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010929743
NSN
5961-01-092-9743
JAN1N5258B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010929743
NSN
5961-01-092-9743
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.40 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AH
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -0.5 TO 0.5
Related Searches:
451445-03
TRANSISTOR
NSN, MFG P/N
5961010930044
NSN
5961-01-093-0044
MFG
BAE SYSTEMS CONTROLS INC
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 07690-451445 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
SJ2918H1
TRANSISTOR
NSN, MFG P/N
5961010930044
NSN
5961-01-093-0044
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 07690-451445 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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STA9280
TRANSISTOR
NSN, MFG P/N
5961010930044
NSN
5961-01-093-0044
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 07690-451445 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
BB121
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010930045
NSN
5961-01-093-0045
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM REVERSE VOLTAGE, DC
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308791-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010930111
NSN
5961-01-093-0111
308791-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010930111
NSN
5961-01-093-0111
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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DH3467D/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010930111
NSN
5961-01-093-0111
DH3467D/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010930111
NSN
5961-01-093-0111
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
2N6468
TRANSISTOR
NSN, MFG P/N
5961010930852
NSN
5961-01-093-0852
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6483 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
5L.5513.001.37
TRANSISTOR
NSN, MFG P/N
5961010930852
NSN
5961-01-093-0852
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6483 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
13SE113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010930853
NSN
5961-01-093-0853
MFG
SOLITRON DEVICES INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MINIMUM AND 0.328 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
FESE113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010930853
NSN
5961-01-093-0853
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MINIMUM AND 0.328 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
3240515-0002
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010931548
NSN
5961-01-093-1548
3240515-0002
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010931548
NSN
5961-01-093-1548
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
Related Searches:
2N4998
TRANSISTOR
NSN, MFG P/N
5961010932135
NSN
5961-01-093-2135
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.318 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL HEIGHT: 0.320 INCHES MINIMUM AND 0.468 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.185 INCHES MINIMUM AND 0.215 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
Related Searches:
430608
TRANSISTOR
NSN, MFG P/N
5961010932577
NSN
5961-01-093-2577
MFG
TELEMECHANICS INC
Description
DESIGN CONTROL REFERENCE: 430608
MANUFACTURERS CODE: 57712
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.624 INCHES NOMINAL
OVERALL WIDTH: 0.406 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.022 INCHES NOMINAL
TERMINAL LENGTH: 0.531 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
2N2594
TRANSISTOR
NSN, MFG P/N
5961010932578
NSN
5961-01-093-2578
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-SM-B-416325 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
LPT0103
TRANSISTOR
NSN, MFG P/N
5961010932578
NSN
5961-01-093-2578
MFG
COASTCAST CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-SM-B-416325 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
NSE4729
TRANSISTOR
NSN, MFG P/N
5961010932578
NSN
5961-01-093-2578
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-SM-B-416325 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SM-B-416325
TRANSISTOR
NSN, MFG P/N
5961010932578
NSN
5961-01-093-2578
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-SM-B-416325 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SS2001
TRANSISTOR
NSN, MFG P/N
5961010932578
NSN
5961-01-093-2578
MFG
SYNTAR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-SM-B-416325 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
