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5961-01-081-0245
20 Products
RCA65817
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810245
NSN
5961-01-081-0245
RCA65817
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810245
NSN
5961-01-081-0245
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV ADVANCED TECHNOLOGY LABORATORIES
Description
DESIGN CONTROL REFERENCE: GEC137ER168
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
OVERALL LENGTH: 0.550 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 500.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 NOMINAL NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 10.0 NOMINAL PEAK NEGATIVE GATE VOLTAGE
Related Searches:
141923106
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010810065
NSN
5961-01-081-0065
MFG
ENERSYS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
143333009
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810067
NSN
5961-01-081-0067
143333009
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810067
NSN
5961-01-081-0067
MFG
EATON CORPORATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
C450M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810067
NSN
5961-01-081-0067
MFG
GENERAL ELECTRIC COMPANY DBA GE STRUCTURED SERVICES DIV GENERAL ELECTRIC STRUCTURED SERVICES LP
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
T920060903
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810067
NSN
5961-01-081-0067
T920060903
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810067
NSN
5961-01-081-0067
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
143-328-003
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
143-328-003
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
143328003
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
143328003
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
MFG
EATON CORPORATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
420PBM80
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
420PBM80
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
C398NX157
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
C398NX157
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
NL-F398NX137
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
NL-F398NX137
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
MFG
NATIONAL ELECTRONICS DIV OF RICHARDSON ELECTRONICS LTD
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
T72708455 4DMA14
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
T72708455 4DMA14
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810068
NSN
5961-01-081-0068
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
21813
TRANSISTOR
NSN, MFG P/N
5961010810241
NSN
5961-01-081-0241
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.633 INCHES MINIMUM AND 0.643 INCHES MAXIMUM
OVERALL WIDTH: 0.495 INCHES MINIMUM AND 0.503 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N6045
TRANSISTOR
NSN, MFG P/N
5961010810241
NSN
5961-01-081-0241
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.633 INCHES MINIMUM AND 0.643 INCHES MAXIMUM
OVERALL WIDTH: 0.495 INCHES MINIMUM AND 0.503 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N6042
TRANSISTOR
NSN, MFG P/N
5961010810242
NSN
5961-01-081-0242
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.633 INCHES MINIMUM AND 0.643 INCHES MAXIMUM
OVERALL WIDTH: 0.495 INCHES MINIMUM AND 0.503 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1N2997B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010810243
NSN
5961-01-081-0243
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: MOUNTING HARDWARE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
3041786
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010810243
NSN
5961-01-081-0243
MFG
THALES UK LTD THALES AEROSPACE
Description
FEATURES PROVIDED: MOUNTING HARDWARE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
C440M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810244
NSN
5961-01-081-0244
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.100 INCHES MAXIMUM
OVERALL HEIGHT: 1.040 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM OFF-STATE VOLTAGE, PEAK
Related Searches:
11781378
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810245
NSN
5961-01-081-0245
11781378
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810245
NSN
5961-01-081-0245
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: GEC137ER168
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
OVERALL LENGTH: 0.550 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 500.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 NOMINAL NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 10.0 NOMINAL PEAK NEGATIVE GATE VOLTAGE
Related Searches:
7117328-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810245
NSN
5961-01-081-0245
7117328-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810245
NSN
5961-01-081-0245
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
DESIGN CONTROL REFERENCE: GEC137ER168
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
OVERALL LENGTH: 0.550 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 500.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 NOMINAL NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 10.0 NOMINAL PEAK NEGATIVE GATE VOLTAGE
Related Searches:
GEC137ER168
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810245
NSN
5961-01-081-0245
GEC137ER168
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010810245
NSN
5961-01-081-0245
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
DESIGN CONTROL REFERENCE: GEC137ER168
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
OVERALL LENGTH: 0.550 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 500.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 NOMINAL NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 10.0 NOMINAL PEAK NEGATIVE GATE VOLTAGE
