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5961-01-079-2601
20 Products
A2X211M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010792601
NSN
5961-01-079-2601
MFG
FEI MICROWAVE INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.084 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1017B9048
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010792602
NSN
5961-01-079-2602
1017B9048
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010792602
NSN
5961-01-079-2602
MFG
NORTHROP GRUMMAN CORPORATION DBA INTEGRATED SYSTEMS SECTOR DIV INTEGRATED SYSTEMS SECTOR
Description
III END ITEM IDENTIFICATION: THIS CONTROLLER RECTIFIER IS USEDON THE COMMON STRATEGIC DOPPLER NAVIGATION SYSTEM (AN/APN-218)
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
JANTX2N1772A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010792602
NSN
5961-01-079-2602
JANTX2N1772A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010792602
NSN
5961-01-079-2602
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
III END ITEM IDENTIFICATION: THIS CONTROLLER RECTIFIER IS USEDON THE COMMON STRATEGIC DOPPLER NAVIGATION SYSTEM (AN/APN-218)
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
S6420B883B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010792603
NSN
5961-01-079-2603
S6420B883B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010792603
NSN
5961-01-079-2603
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.673 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.557 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
842619-1
SWITCH,DIODE
NSN, MFG P/N
5961010792683
NSN
5961-01-079-2683
MFG
RAYTHEON COMPANY
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: RATED POWER 5.0 WATTS PEAK 200.0 MILLIWATTS AVERAGE,VSWR 1.25 TO 1.00 ALL PORTS,INSERTION LOSS 0.75 DB MAX,ISOLATION 40.0 DB MIN,SWITCHING TIME 3.0 MICROSECONDS MAX,CONTROL TERMINALS 3 TURRET TYPE,PORT 1 FLANGE AREA EQUIVALENT TO UG-1665/U,PORTS 2 AND 3
~1: FLANGE AREA EQUIVALENT TO UG-1666/U,BODY 2.500 IN. L,1.560 IN. W,1.312 IN. HGT
Related Searches:
842619-2
SWITCH,DIODE
NSN, MFG P/N
5961010792684
NSN
5961-01-079-2684
MFG
RAYTHEON COMPANY
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: RATED POWER 5.0 WATTS PEAK 200.0 MILLIWATTS AVERAGE,VSWR 1.25 TO 1.00 ALL PORTS,INSERTION LOSS 0.75 DB MAX,ISOLATION 40.0 DB MIN,SWITCHING TIME 3.0 MICROSECONDS MAX,TURRET TERMINALS 3,PORT 1 FLANGE AREA EQUIVALENT TO UG-1665/U,PORTS 2 AND 3 FLANGE AREA
~1: EQUIVALENT TO UG-1666/U,BODY 2.500 IN. L,1.560 IN. W,1.312 IN. HGT
Related Searches:
352-7500-941
TRANSISTOR
NSN, MFG P/N
5961010793295
NSN
5961-01-079-3295
MFG
API ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.762 INCHES NOMINAL
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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1N649
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010793296
NSN
5961-01-079-3296
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 64547
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 819782-26
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 83298-819782 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
819782-26
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010793296
NSN
5961-01-079-3296
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 64547
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 819782-26
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 83298-819782 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
C126A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010793297
NSN
5961-01-079-3297
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MINIMUM AND 0.355 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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0014123126061
TRANSISTOR,SPECIAL
NSN, MFG P/N
5961010793343
NSN
5961-01-079-3343
MFG
TE KA DE FELTEN & GUILLEAUME FERNMEL DEANLAGEN GMBH
Description
DESIGN CONTROL REFERENCE: TIP646
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
MANUFACTURERS CODE: K0461
THE MANUFACTURERS DATA:
Related Searches:
TIP646
TRANSISTOR,SPECIAL
NSN, MFG P/N
5961010793343
NSN
5961-01-079-3343
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
DESIGN CONTROL REFERENCE: TIP646
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
MANUFACTURERS CODE: K0461
THE MANUFACTURERS DATA:
Related Searches:
2N2906
TRANSISTOR,SPECIAL
NSN, MFG P/N
5961010793346
NSN
5961-01-079-3346
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
DESIGN CONTROL REFERENCE: 2N2906
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
MANUFACTURERS CODE: K0461
THE MANUFACTURERS DATA:
Related Searches:
127571
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010793480
NSN
5961-01-079-3480
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
5640
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010793480
NSN
5961-01-079-3480
MFG
METHODICAL SVC. CORP DIV OPERATIONS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
541143-003
DIODE
NSN, MFG P/N
5961010793600
NSN
5961-01-079-3600
MFG
MARATHONNORCO AEROSPACE INC . DBA CHRISTIE ELECTRIC
Description
DIODE
Related Searches:
1274-30-2
TRANSISTOR
NSN, MFG P/N
5961010793759
NSN
5961-01-079-3759
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
2SC1128
TRANSISTOR
NSN, MFG P/N
5961010793761
NSN
5961-01-079-3761
MFG
SONY CORPORATION
Description
TRANSISTOR
Related Searches:
2SC1124
TRANSISTOR
NSN, MFG P/N
5961010793762
NSN
5961-01-079-3762
MFG
SONY CORPORATION
Description
TRANSISTOR
Related Searches:
MIS-18695-2
TRANSISTOR
NSN, MFG P/N
5961010793942
NSN
5961-01-079-3942
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: MIS-18695-2
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
