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5961-01-075-9601
20 Products
4871918207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759601
NSN
5961-01-075-9601
4871918207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759601
NSN
5961-01-075-9601
MFG
TEAC CORPORATION
Description
DESIGN CONTROL REFERENCE: 4871918207
III END ITEM IDENTIFICATION: V4200G
MANUFACTURERS CODE: S0633
THE MANUFACTURERS DATA:
Related Searches:
28682-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759602
NSN
5961-01-075-9602
MFG
TRANSISTOR DEVICES INC . DBA TDI POWER
Description
DESIGN CONTROL REFERENCE: 28682-1
III END ITEM IDENTIFICATION: F-15 AIRCRAFT
MANUFACTURERS CODE: 09004
THE MANUFACTURERS DATA:
Related Searches:
2790565-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759603
NSN
5961-01-075-9603
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: D1300A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 34371
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
D1300A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759603
NSN
5961-01-075-9603
MFG
INTERSIL CORPORATION
Description
DESIGN CONTROL REFERENCE: D1300A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 34371
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
11780013-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759604
NSN
5961-01-075-9604
11780013-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759604
NSN
5961-01-075-9604
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 11780013-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL OR PLASTIC
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
FDH4256
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759604
NSN
5961-01-075-9604
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 11780013-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL OR PLASTIC
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
PC70835-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010759604
NSN
5961-01-075-9604
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 11780013-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL OR PLASTIC
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.340 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
12-35A1A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010759838
NSN
5961-01-075-9838
12-35A1A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010759838
NSN
5961-01-075-9838
MFG
TOSHIBA HOSHASEN CO. LTD
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES FORWARD CURRENT, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 24.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 35.0 MILLIMETERS MINIMUM AND 36.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
Related Searches:
4871985151
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010759838
NSN
5961-01-075-9838
4871985151
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010759838
NSN
5961-01-075-9838
MFG
TEAC CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES FORWARD CURRENT, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 24.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 35.0 MILLIMETERS MINIMUM AND 36.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
Related Searches:
4871917207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760253
NSN
5961-01-076-0253
4871917207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760253
NSN
5961-01-076-0253
MFG
TEAC CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4871913377
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760254
NSN
5961-01-076-0254
4871913377
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760254
NSN
5961-01-076-0254
MFG
TEAC CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4871916207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760255
NSN
5961-01-076-0255
4871916207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760255
NSN
5961-01-076-0255
MFG
TEAC CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4871911207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760256
NSN
5961-01-076-0256
4871911207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760256
NSN
5961-01-076-0256
MFG
TEAC CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4871914707
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760257
NSN
5961-01-076-0257
4871914707
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760257
NSN
5961-01-076-0257
MFG
TEAC CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4871916277
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760258
NSN
5961-01-076-0258
4871916277
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760258
NSN
5961-01-076-0258
MFG
TEAC CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4871916877
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760259
NSN
5961-01-076-0259
4871916877
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010760259
NSN
5961-01-076-0259
MFG
TEAC CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2509366
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010760451
NSN
5961-01-076-0451
2509366
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010760451
NSN
5961-01-076-0451
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 65.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN V
Related Searches:
2N2639
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010760451
NSN
5961-01-076-0451
2N2639
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010760451
NSN
5961-01-076-0451
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 65.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN V
Related Searches:
SD1713H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010760451
NSN
5961-01-076-0451
SD1713H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010760451
NSN
5961-01-076-0451
MFG
DISTRICT OF COLUMBIA GOVERNMENT CORRECTIONS DEPT INDUSTRIAL DIV
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 65.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN V
Related Searches:
2N6051
TRANSISTOR
NSN, MFG P/N
5961010760452
NSN
5961-01-076-0452
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.20 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: SJ4200H
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.438 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERIST
