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5961-01-066-9507

20 Products

SD10W15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010669507

NSN

5961-01-066-9507

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SD10W15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010669507

NSN

5961-01-066-9507

MFG

SOLITRON DEVICES INC.

Description

DESIGN CONTROL REFERENCE: SD10W15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 21845
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

16100-014

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010667509

NSN

5961-01-066-7509

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16100-014

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010667509

NSN

5961-01-066-7509

MFG

DYNALEC CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 650.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5195
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/118
OVERALL DIAMETER: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/118 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 180.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JAN1N5195

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010667509

NSN

5961-01-066-7509

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JAN1N5195

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010667509

NSN

5961-01-066-7509

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 650.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5195
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/118
OVERALL DIAMETER: 0.094 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/118 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 180.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

NSC001

MOUNTING CLIP,LIGHT

NSN, MFG P/N

5961010667523

NSN

5961-01-066-7523

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NSC001

MOUNTING CLIP,LIGHT

NSN, MFG P/N

5961010667523

NSN

5961-01-066-7523

MFG

NATIONAL SEMICONDUCTOR CORP

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: 0.310 IN. LG; PLASTIC

TMH-001

MOUNTING CLIP,LIGHT

NSN, MFG P/N

5961010667523

NSN

5961-01-066-7523

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TMH-001

MOUNTING CLIP,LIGHT

NSN, MFG P/N

5961010667523

NSN

5961-01-066-7523

MFG

THREE-FIVE SYSTEMS INC

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: 0.310 IN. LG; PLASTIC

10183054

TRANSISTOR

NSN, MFG P/N

5961010667886

NSN

5961-01-066-7886

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10183054

TRANSISTOR

NSN, MFG P/N

5961010667886

NSN

5961-01-066-7886

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

DESIGN CONTROL REFERENCE: 10183054
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL HEIGHT: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

10668648

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010667887

NSN

5961-01-066-7887

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10668648

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010667887

NSN

5961-01-066-7887

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

DESIGN CONTROL REFERENCE: 10668648
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

48851

TRANSISTOR

NSN, MFG P/N

5961010668352

NSN

5961-01-066-8352

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48851

TRANSISTOR

NSN, MFG P/N

5961010668352

NSN

5961-01-066-8352

MFG

HAMILTON STANDARD ELECTRONICS SYSTEMS INC TELE-DYNAMICS DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

80559

TRANSISTOR

NSN, MFG P/N

5961010668352

NSN

5961-01-066-8352

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80559

TRANSISTOR

NSN, MFG P/N

5961010668352

NSN

5961-01-066-8352

MFG

MICROWAVE SEMICONDUCTOR CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

117691

CONTACT ASSEMBLY,D

NSN, MFG P/N

5961010668480

NSN

5961-01-066-8480

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117691

CONTACT ASSEMBLY,D

NSN, MFG P/N

5961010668480

NSN

5961-01-066-8480

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

A532A079

TRANSISTOR

NSN, MFG P/N

5961010668724

NSN

5961-01-066-8724

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A532A079

TRANSISTOR

NSN, MFG P/N

5961010668724

NSN

5961-01-066-8724

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.701 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 700.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

STC9179

TRANSISTOR

NSN, MFG P/N

5961010668724

NSN

5961-01-066-8724

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STC9179

TRANSISTOR

NSN, MFG P/N

5961010668724

NSN

5961-01-066-8724

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.701 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 700.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

5L.5532.405.34

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668725

NSN

5961-01-066-8725

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5L.5532.405.34

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668725

NSN

5961-01-066-8725

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.680 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

SBMC4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668725

NSN

5961-01-066-8725

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SBMC4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668725

NSN

5961-01-066-8725

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.680 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

1N4575

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668726

NSN

5961-01-066-8726

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1N4575

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668726

NSN

5961-01-066-8726

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N4579A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668726

NSN

5961-01-066-8726

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1N4579A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668726

NSN

5961-01-066-8726

MFG

C O D I CORP DBA CODI SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N4579A-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668726

NSN

5961-01-066-8726

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1N4579A-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668726

NSN

5961-01-066-8726

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

A531A037-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668726

NSN

5961-01-066-8726

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A531A037-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010668726

NSN

5961-01-066-8726

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

DL750

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010669220

NSN

5961-01-066-9220

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DL750

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010669220

NSN

5961-01-066-9220

MFG

SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV

Description

SPECIAL FEATURES: 7 SEGMENT LED DISPLAY
TERMINAL TYPE AND QUANTITY: 12 PIN

A3107

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010669507

NSN

5961-01-066-9507

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A3107

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010669507

NSN

5961-01-066-9507

MFG

AERONAUTICAL COMMUNICATIONS EQUIPMENT INC

Description

DESIGN CONTROL REFERENCE: SD10W15
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 21845
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: