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5961-01-041-3341

20 Products

52167-301FPP28209

TRANSISTOR

NSN, MFG P/N

5961010413341

NSN

5961-01-041-3341

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52167-301FPP28209

TRANSISTOR

NSN, MFG P/N

5961010413341

NSN

5961-01-041-3341

MFG

AEROFLEX LIMITED

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.278 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
OVERALL LENGTH: 0.178 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

PT9703

TRANSISTOR

NSN, MFG P/N

5961010413341

NSN

5961-01-041-3341

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PT9703

TRANSISTOR

NSN, MFG P/N

5961010413341

NSN

5961-01-041-3341

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.278 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
OVERALL LENGTH: 0.178 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

QX958084

TRANSISTOR

NSN, MFG P/N

5961010413341

NSN

5961-01-041-3341

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QX958084

TRANSISTOR

NSN, MFG P/N

5961010413341

NSN

5961-01-041-3341

MFG

TELEPHONICS CORP/PRD INSTRUMENTS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.278 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
OVERALL LENGTH: 0.178 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

D41D4

TRANSISTOR

NSN, MFG P/N

5961010413342

NSN

5961-01-041-3342

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D41D4

TRANSISTOR

NSN, MFG P/N

5961010413342

NSN

5961-01-041-3342

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.285 INCHES MINIMUM AND 0.315 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL WIDTH: 0.170 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

260338

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

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260338

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

MFG

SELEX COMMUNICATIONS GMBH

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5719
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/443
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/443 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

352250020961

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

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352250020961

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

MFG

THALES NEDERLAND

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5719
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/443
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/443 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

560862

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

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560862

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

MFG

THALES COMMUNICATIONS S.A.

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5719
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/443
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/443 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

5M.5534.220.10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

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5M.5534.220.10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5719
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/443
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/443 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

99079282

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

View More Info

99079282

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

MFG

THALES

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5719
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/443
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/443 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JAN1N5719

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

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JAN1N5719

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413344

NSN

5961-01-041-3344

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5719
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/443
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/443 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1N5145A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413345

NSN

5961-01-041-3345

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1N5145A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413345

NSN

5961-01-041-3345

MFG

CRYSTALONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5145A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-383
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 28.3 PF CAPACITANCE
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/383 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER

JAN1N5145A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413345

NSN

5961-01-041-3345

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JAN1N5145A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413345

NSN

5961-01-041-3345

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5145A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-383
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 28.3 PF CAPACITANCE
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/383 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER

5082-3141

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413346

NSN

5961-01-041-3346

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5082-3141

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413346

NSN

5961-01-041-3346

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, ORION P-3
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.116 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-772883 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, DC

5082-9516

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413346

NSN

5961-01-041-3346

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5082-9516

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413346

NSN

5961-01-041-3346

MFG

HEWLETT PACKARD CO

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, ORION P-3
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.116 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-772883 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, DC

772883-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413346

NSN

5961-01-041-3346

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772883-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413346

NSN

5961-01-041-3346

MFG

RAYTHEON COMPANY

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, ORION P-3
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.116 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-772883 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, DC

SM603-W-313-101A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413346

NSN

5961-01-041-3346

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SM603-W-313-101A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413346

NSN

5961-01-041-3346

MFG

RAYTHEON SYSTEMS LTD

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, VIKING S-3B; AIRCRAFT, ORION P-3
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.116 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES NOMINAL
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-772883 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, DC

GC-2544-15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413347

NSN

5961-01-041-3347

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GC-2544-15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010413347

NSN

5961-01-041-3347

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1884-0248

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010413349

NSN

5961-01-041-3349

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1884-0248

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010413349

NSN

5961-01-041-3349

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT); AIRCRAFT, VIKING S-3B
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28480-A-1884-0248-1 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

5020-2650 ITEM 2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010413349

NSN

5961-01-041-3349

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5020-2650 ITEM 2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010413349

NSN

5961-01-041-3349

MFG

HEWLETT PACKARD CO

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT); AIRCRAFT, VIKING S-3B
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28480-A-1884-0248-1 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

65395

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010413349

NSN

5961-01-041-3349

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65395

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010413349

NSN

5961-01-041-3349

MFG

INTERSIL CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT); AIRCRAFT, VIKING S-3B
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28480-A-1884-0248-1 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE