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5961-01-033-5072
20 Products
2SC696
TRANSISTOR
NSN, MFG P/N
5961010335072
NSN
5961-01-033-5072
MFG
CALVERT ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N6547
TRANSISTOR
NSN, MFG P/N
5961010332332
NSN
5961-01-033-2332
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 175.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6578 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 9.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
359-0036
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010332334
NSN
5961-01-033-2334
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
DESIGN CONTROL REFERENCE: ITT5394
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.125 INCHES MAXIMUM
OVERALL WIDTH: 0.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
ITT5394
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010332334
NSN
5961-01-033-2334
MFG
ITT SEMICONDUCTORS DIV
Description
DESIGN CONTROL REFERENCE: ITT5394
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.125 INCHES MAXIMUM
OVERALL WIDTH: 0.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
JANTX1N5524B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010332336
NSN
5961-01-033-2336
JANTX1N5524B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010332336
NSN
5961-01-033-2336
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 68.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5524B
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N1202AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010332608
NSN
5961-01-033-2608
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
007-0295-00
TRANSISTOR
NSN, MFG P/N
5961010333079
NSN
5961-01-033-3079
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
1168.592
TRANSISTOR
NSN, MFG P/N
5961010333079
NSN
5961-01-033-3079
MFG
HAGENUK MARINEKOMMUNIKATION GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
158-295
TRANSISTOR
NSN, MFG P/N
5961010333079
NSN
5961-01-033-3079
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
3 114 250 099
TRANSISTOR
NSN, MFG P/N
5961010333079
NSN
5961-01-033-3079
MFG
BTS BRODCAST TELEVISION SYSTEMS GMBH VKF1
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
646086-1
TRANSISTOR
NSN, MFG P/N
5961010333079
NSN
5961-01-033-3079
MFG
AMERICAN MONARCH CORP
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
CS504097-1
TRANSISTOR
NSN, MFG P/N
5961010333079
NSN
5961-01-033-3079
MFG
SELEX COMMUNICATIONS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
MJ2955
TRANSISTOR
NSN, MFG P/N
5961010333079
NSN
5961-01-033-3079
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
0N106518
SEMICONDUCTOR,NOISE
NSN, MFG P/N
5961010333080
NSN
5961-01-033-3080
MFG
NATIONAL SECURITY AGENCY
Description
DESIGN CONTROL REFERENCE: 0N106518
III END ITEM IDENTIFICATION: KY-13
MANUFACTURERS CODE: 98230
THE MANUFACTURERS DATA:
Related Searches:
SM-B-796885
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010333648
NSN
5961-01-033-3648
SM-B-796885
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010333648
NSN
5961-01-033-3648
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
DESIGN CONTROL REFERENCE: SM-B-796885
MANUFACTURERS CODE: 80063
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.395 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
0N234809
TRANSISTOR
NSN, MFG P/N
5961010333688
NSN
5961-01-033-3688
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 0N234809
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
RCA1A05
TRANSISTOR
NSN, MFG P/N
5961010333782
NSN
5961-01-033-3782
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
TRANSISTOR
Related Searches:
RCA1A06
TRANSISTOR
NSN, MFG P/N
5961010333783
NSN
5961-01-033-3783
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
TRANSISTOR
Related Searches:
632283-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010333784
NSN
5961-01-033-3784
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
8437012
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010334479
NSN
5961-01-033-4479
8437012
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010334479
NSN
5961-01-033-4479
MFG
ARMY UNITED STATES DEPARTMENT OF THE DBA ROCK ISLAND ARSENAL
Description
DISTANCE BETWEEN MOUNTING FACILITY CENTERS: 1.750 INCHES NOMINAL SINGLE MOUNTING FACILITY SINGLE CENTER GROUP
MATERIAL: COPPER
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE SINGLE MOUNTING FACILITY
SURFACE TREATMENT: TIN
UNTHREADED MOUNTING HOLE DIAMETER: 0.416 INCHES NOMINAL SINGLE MOUNTING FACILITY
