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5961-01-033-5072

20 Products

2SC696

TRANSISTOR

NSN, MFG P/N

5961010335072

NSN

5961-01-033-5072

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2SC696

TRANSISTOR

NSN, MFG P/N

5961010335072

NSN

5961-01-033-5072

MFG

CALVERT ELECTRONICS INC

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N6547

TRANSISTOR

NSN, MFG P/N

5961010332332

NSN

5961-01-033-2332

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2N6547

TRANSISTOR

NSN, MFG P/N

5961010332332

NSN

5961-01-033-2332

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 175.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6578 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 9.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

359-0036

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010332334

NSN

5961-01-033-2334

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359-0036

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010332334

NSN

5961-01-033-2334

MFG

ONAN CORPORATION DBA CUMMINS POWER GENERATION

Description

DESIGN CONTROL REFERENCE: ITT5394
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.125 INCHES MAXIMUM
OVERALL WIDTH: 0.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

ITT5394

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010332334

NSN

5961-01-033-2334

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ITT5394

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010332334

NSN

5961-01-033-2334

MFG

ITT SEMICONDUCTORS DIV

Description

DESIGN CONTROL REFERENCE: ITT5394
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.125 INCHES MAXIMUM
OVERALL WIDTH: 0.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

JANTX1N5524B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010332336

NSN

5961-01-033-2336

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JANTX1N5524B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010332336

NSN

5961-01-033-2336

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 68.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5524B
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N1202AR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010332608

NSN

5961-01-033-2608

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1N1202AR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010332608

NSN

5961-01-033-2608

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

007-0295-00

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

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007-0295-00

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

1168.592

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

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1168.592

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

MFG

HAGENUK MARINEKOMMUNIKATION GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

158-295

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

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158-295

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

MFG

SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

3 114 250 099

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

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3 114 250 099

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

MFG

BTS BRODCAST TELEVISION SYSTEMS GMBH VKF1

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

646086-1

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

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646086-1

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

MFG

AMERICAN MONARCH CORP

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

CS504097-1

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

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CS504097-1

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

MFG

SELEX COMMUNICATIONS LTD

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

MJ2955

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

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MJ2955

TRANSISTOR

NSN, MFG P/N

5961010333079

NSN

5961-01-033-3079

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

0N106518

SEMICONDUCTOR,NOISE

NSN, MFG P/N

5961010333080

NSN

5961-01-033-3080

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0N106518

SEMICONDUCTOR,NOISE

NSN, MFG P/N

5961010333080

NSN

5961-01-033-3080

MFG

NATIONAL SECURITY AGENCY

Description

DESIGN CONTROL REFERENCE: 0N106518
III END ITEM IDENTIFICATION: KY-13
MANUFACTURERS CODE: 98230
THE MANUFACTURERS DATA:

SM-B-796885

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010333648

NSN

5961-01-033-3648

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SM-B-796885

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010333648

NSN

5961-01-033-3648

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

DESIGN CONTROL REFERENCE: SM-B-796885
MANUFACTURERS CODE: 80063
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.395 INCHES NOMINAL
THE MANUFACTURERS DATA:

0N234809

TRANSISTOR

NSN, MFG P/N

5961010333688

NSN

5961-01-033-3688

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0N234809

TRANSISTOR

NSN, MFG P/N

5961010333688

NSN

5961-01-033-3688

MFG

NATIONAL SECURITY AGENCY

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 0N234809
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

RCA1A05

TRANSISTOR

NSN, MFG P/N

5961010333782

NSN

5961-01-033-3782

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RCA1A05

TRANSISTOR

NSN, MFG P/N

5961010333782

NSN

5961-01-033-3782

MFG

RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS

RCA1A06

TRANSISTOR

NSN, MFG P/N

5961010333783

NSN

5961-01-033-3783

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RCA1A06

TRANSISTOR

NSN, MFG P/N

5961010333783

NSN

5961-01-033-3783

MFG

RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS

632283-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010333784

NSN

5961-01-033-3784

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632283-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010333784

NSN

5961-01-033-3784

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

8437012

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010334479

NSN

5961-01-033-4479

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8437012

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010334479

NSN

5961-01-033-4479

MFG

ARMY UNITED STATES DEPARTMENT OF THE DBA ROCK ISLAND ARSENAL

Description

DISTANCE BETWEEN MOUNTING FACILITY CENTERS: 1.750 INCHES NOMINAL SINGLE MOUNTING FACILITY SINGLE CENTER GROUP
MATERIAL: COPPER
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE SINGLE MOUNTING FACILITY
SURFACE TREATMENT: TIN
UNTHREADED MOUNTING HOLE DIAMETER: 0.416 INCHES NOMINAL SINGLE MOUNTING FACILITY