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5961-01-032-4770

20 Products

JANTX1N4102

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324770

NSN

5961-01-032-4770

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JANTX1N4102

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324770

NSN

5961-01-032-4770

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1300.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4102
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DISPSYSAN-ALE-40
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

1896943

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010322603

NSN

5961-01-032-2603

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1896943

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010322603

NSN

5961-01-032-2603

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 1896943
MANUFACTURERS CODE: 10001
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: TESTED IN ACCORDANCE W/NAVORD OD 42046

3N84

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010322681

NSN

5961-01-032-2681

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3N84

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010322681

NSN

5961-01-032-2681

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN

2364674

TRANSISTOR

NSN, MFG P/N

5961010322918

NSN

5961-01-032-2918

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2364674

TRANSISTOR

NSN, MFG P/N

5961010322918

NSN

5961-01-032-2918

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 2364674
MANUFACTURERS CODE: 10001
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD42046

2364764

TRANSISTOR

NSN, MFG P/N

5961010322919

NSN

5961-01-032-2919

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2364764

TRANSISTOR

NSN, MFG P/N

5961010322919

NSN

5961-01-032-2919

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 2364764
MANUFACTURERS CODE: 10001
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD42046

352250020869

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010323282

NSN

5961-01-032-3282

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352250020869

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010323282

NSN

5961-01-032-3282

MFG

THALES NEDERLAND

MA-47776

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010323282

NSN

5961-01-032-3282

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MA-47776

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010323282

NSN

5961-01-032-3282

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

BC256A

TRANSISTOR

NSN, MFG P/N

5961010323633

NSN

5961-01-032-3633

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BC256A

TRANSISTOR

NSN, MFG P/N

5961010323633

NSN

5961-01-032-3633

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 0.05 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.157 INCHES NOMINAL
OVERALL HEIGHT: 0.197 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 64.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

1Z13T10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010323637

NSN

5961-01-032-3637

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1Z13T10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010323637

NSN

5961-01-032-3637

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
OVERALL LENGTH: 0.656 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

10668012

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010324218

NSN

5961-01-032-4218

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10668012

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010324218

NSN

5961-01-032-4218

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 18876
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 10668012
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.385 INCHES MAXIMUM
OVERALL WIDTH: 1.385 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE

MDA980-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010324218

NSN

5961-01-032-4218

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MDA980-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010324218

NSN

5961-01-032-4218

MFG

FREESCALE SEMICONDUCTOR INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 18876
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 10668012
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.385 INCHES MAXIMUM
OVERALL WIDTH: 1.385 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE

1N4615

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324230

NSN

5961-01-032-4230

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1N4615

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324230

NSN

5961-01-032-4230

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

353-3591-390

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324230

NSN

5961-01-032-4230

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353-3591-390

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324230

NSN

5961-01-032-4230

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

MZ4615

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324230

NSN

5961-01-032-4230

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MZ4615

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324230

NSN

5961-01-032-4230

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

4842040

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010324694

NSN

5961-01-032-4694

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4842040

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010324694

NSN

5961-01-032-4694

MFG

KALMAR AC INC

Description

DESIGN CONTROL REFERENCE: 4842040
MANUFACTURERS CODE: 0AHU0
OVERALL HEIGHT: 10.950 INCHES NOMINAL
OVERALL LENGTH: 4.510 INCHES NOMINAL
THE MANUFACTURERS DATA:

6010012-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324769

NSN

5961-01-032-4769

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6010012-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324769

NSN

5961-01-032-4769

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.570 INCHES MINIMUM AND 0.763 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 34217-6010012 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

PD 9802

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324769

NSN

5961-01-032-4769

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PD 9802

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324769

NSN

5961-01-032-4769

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.570 INCHES MINIMUM AND 0.763 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 34217-6010012 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

PL797350-001PIECE7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324769

NSN

5961-01-032-4769

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PL797350-001PIECE7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324769

NSN

5961-01-032-4769

MFG

MICROSEMI CORP.-POWER MANAGEMENT GROUP HOLDING DBA BABCOCK

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.570 INCHES MINIMUM AND 0.763 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 34217-6010012 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

353-9016-160

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324770

NSN

5961-01-032-4770

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353-9016-160

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324770

NSN

5961-01-032-4770

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 1300.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4102
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DISPSYSAN-ALE-40
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

53A0048

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324770

NSN

5961-01-032-4770

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53A0048

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010324770

NSN

5961-01-032-4770

MFG

SIEMENS ENERGY & AUTOMATION INC. DBA SIEMENS AIRFIELD SOLUTIONS DIV SIEMENS ENERGY & AUTOMATION DBA SIEMENS AIRFIELD SOLUTIONS

Description

CURRENT RATING PER CHARACTERISTIC: 1300.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4102
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DISPSYSAN-ALE-40
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.7 MAXIMUM NOMINAL REGULATOR VOLTAGE