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5961-00-941-3992

20 Products

50280-315-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009413992

NSN

5961-00-941-3992

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50280-315-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009413992

NSN

5961-00-941-3992

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR

1N1825C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009412283

NSN

5961-00-941-2283

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1N1825C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009412283

NSN

5961-00-941-2283

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.434 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

IN1825C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009412283

NSN

5961-00-941-2283

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IN1825C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009412283

NSN

5961-00-941-2283

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.434 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N955

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009412370

NSN

5961-00-941-2370

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1N955

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009412370

NSN

5961-00-941-2370

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3739 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK

910170-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009412370

NSN

5961-00-941-2370

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910170-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009412370

NSN

5961-00-941-2370

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3739 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK

474M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413807

NSN

5961-00-941-3807

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474M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413807

NSN

5961-00-941-3807

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

DESIGN CONTROL REFERENCE: 479-0682-003
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

479-0682-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413807

NSN

5961-00-941-3807

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479-0682-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413807

NSN

5961-00-941-3807

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0682-003
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

C37B

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009413809

NSN

5961-00-941-3809

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C37B

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009413809

NSN

5961-00-941-3809

MFG

GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC

343-214-005

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009413810

NSN

5961-00-941-3810

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343-214-005

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009413810

NSN

5961-00-941-3810

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKOVER VOLTAGE, DC

C37U

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009413810

NSN

5961-00-941-3810

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C37U

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009413810

NSN

5961-00-941-3810

MFG

GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 105.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKOVER VOLTAGE, DC

479-0703-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413834

NSN

5961-00-941-3834

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479-0703-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413834

NSN

5961-00-941-3834

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0703-002
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

174-37699-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413903

NSN

5961-00-941-3903

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174-37699-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413903

NSN

5961-00-941-3903

MFG

GTE COMMUNICATION SYSTEMS CORP

Description

DESIGN CONTROL REFERENCE: 174-37699-01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04773
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1851840-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413944

NSN

5961-00-941-3944

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1851840-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413944

NSN

5961-00-941-3944

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE

PS8909

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413944

NSN

5961-00-941-3944

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PS8909

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413944

NSN

5961-00-941-3944

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE

479-0598-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413950

NSN

5961-00-941-3950

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479-0598-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413950

NSN

5961-00-941-3950

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG

545M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413950

NSN

5961-00-941-3950

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545M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413950

NSN

5961-00-941-3950

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG

NH479-0598-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413950

NSN

5961-00-941-3950

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NH479-0598-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413950

NSN

5961-00-941-3950

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG

479-0703-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413951

NSN

5961-00-941-3951

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479-0703-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413951

NSN

5961-00-941-3951

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 479-0703-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94756
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1813564-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413952

NSN

5961-00-941-3952

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1813564-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009413952

NSN

5961-00-941-3952

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER GUIDANCE SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.090 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

50275-315-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009413991

NSN

5961-00-941-3991

View More Info

50275-315-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009413991

NSN

5961-00-941-3991

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR