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5961-00-882-8746

20 Products

KX1139

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828746

NSN

5961-00-882-8746

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KX1139

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828746

NSN

5961-00-882-8746

MFG

GENERAL SEMICONDUCTOR INC

Description

DESIGN CONTROL REFERENCE: 32113543
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 20183
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

5L5511-102-26

TRANSISTOR

NSN, MFG P/N

5961008828682

NSN

5961-00-882-8682

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5L5511-102-26

TRANSISTOR

NSN, MFG P/N

5961008828682

NSN

5961-00-882-8682

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N335A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

1N225A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828684

NSN

5961-00-882-8684

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1N225A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828684

NSN

5961-00-882-8684

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.75 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N228A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828685

NSN

5961-00-882-8685

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1N228A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828685

NSN

5961-00-882-8685

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

ZA15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828685

NSN

5961-00-882-8685

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ZA15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828685

NSN

5961-00-882-8685

MFG

NAVCOM DEFENSE ELECTRONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N2846RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828686

NSN

5961-00-882-8686

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JAN1N2846RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828686

NSN

5961-00-882-8686

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2846RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/114
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N2813RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828688

NSN

5961-00-882-8688

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1N2813RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828688

NSN

5961-00-882-8688

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 830.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2813RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N2813RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828688

NSN

5961-00-882-8688

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JAN1N2813RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828688

NSN

5961-00-882-8688

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 830.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2813RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N2813RBA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828688

NSN

5961-00-882-8688

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JAN1N2813RBA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828688

NSN

5961-00-882-8688

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 830.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2813RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N2820RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828689

NSN

5961-00-882-8689

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JAN1N2820RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828689

NSN

5961-00-882-8689

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1980.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2820RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-114
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.2 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N2845RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828690

NSN

5961-00-882-8690

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JAN1N2845RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828690

NSN

5961-00-882-8690

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 68.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2845RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N1357RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

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1N1357RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

MFG

NAVCOM DEFENSE ELECTRONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 2.60 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2982RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

5961008828713

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

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5961008828713

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

MFG

E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES

Description

CURRENT RATING PER CHARACTERISTIC: 2.60 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2982RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

9177493

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

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9177493

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 2.60 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2982RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N2982RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

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JAN1N2982RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 2.60 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2982RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N2982RBA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

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JAN1N2982RBA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828713

NSN

5961-00-882-8713

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 2.60 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2982RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N2975RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828714

NSN

5961-00-882-8714

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1N2975RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828714

NSN

5961-00-882-8714

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 4.45 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2975RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N2975RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828714

NSN

5961-00-882-8714

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JAN1N2975RB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828714

NSN

5961-00-882-8714

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 4.45 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2975RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

JAN1N2975RBA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828714

NSN

5961-00-882-8714

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JAN1N2975RBA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828714

NSN

5961-00-882-8714

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 4.45 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N2975RB
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

32113543

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828746

NSN

5961-00-882-8746

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32113543

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008828746

NSN

5961-00-882-8746

MFG

DRS ICAS LLC

Description

DESIGN CONTROL REFERENCE: 32113543
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 20183
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: