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5961-00-846-5016
20 Products
1N734
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008465016
NSN
5961-00-846-5016
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N734 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N734
SEMICONDUCTOR DEVICE,DIODE
NSN
5961-00-846-5016
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N734 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Parts:
JAN1N3036BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008460823
NSN
5961-00-846-0823
JAN1N3036BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008460823
NSN
5961-00-846-0823
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3036B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-115
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1901-0027
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008462081
NSN
5961-00-846-2081
MFG
HEWLETT PACKARD CO
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 15.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
8899091
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008462081
NSN
5961-00-846-2081
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 15.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
HD5004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008462081
NSN
5961-00-846-2081
MFG
RAYTHEON COMPANY
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.266 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 15.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
508C508G11
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008462589
NSN
5961-00-846-2589
508C508G11
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008462589
NSN
5961-00-846-2589
MFG
WESTINGHOUSE ELECTRIC CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 38.000 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 3.000 INCHES NOMINAL
OVERALL LENGTH: 5.000 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
SPECIAL FEATURES: TWO SLOTS 0.220 IN.BY 0.470 IN.SPACED DIAGONALLY IN CORNERS OF MTG RECTANGLE WHOSE DIM. ARE 1.000 IN.BY 6.265 IN.TO 6.296 IN.LG;ENVIRONMENTAL PROTECTION:MOISTURE;LEAD TYPE:RESISTIVE;DC OUTPUT MAX VOLTAGE:50.0
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
720699-069
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008462589
NSN
5961-00-846-2589
720699-069
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008462589
NSN
5961-00-846-2589
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 38.000 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 3.000 INCHES NOMINAL
OVERALL LENGTH: 5.000 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
SPECIAL FEATURES: TWO SLOTS 0.220 IN.BY 0.470 IN.SPACED DIAGONALLY IN CORNERS OF MTG RECTANGLE WHOSE DIM. ARE 1.000 IN.BY 6.265 IN.TO 6.296 IN.LG;ENVIRONMENTAL PROTECTION:MOISTURE;LEAD TYPE:RESISTIVE;DC OUTPUT MAX VOLTAGE:50.0
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
720699-69
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008462589
NSN
5961-00-846-2589
720699-69
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008462589
NSN
5961-00-846-2589
MFG
RAYTHEON COMPANY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 38.000 AMPERES PEAK POINT CURRENT
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: 0.0 TO 55.0 DEG CELSIUS
OVERALL HEIGHT: 3.000 INCHES NOMINAL
OVERALL LENGTH: 5.000 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
SPECIAL FEATURES: TWO SLOTS 0.220 IN.BY 0.470 IN.SPACED DIAGONALLY IN CORNERS OF MTG RECTANGLE WHOSE DIM. ARE 1.000 IN.BY 6.265 IN.TO 6.296 IN.LG;ENVIRONMENTAL PROTECTION:MOISTURE;LEAD TYPE:RESISTIVE;DC OUTPUT MAX VOLTAGE:50.0
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
2N1483
TRANSISTOR
NSN, MFG P/N
5961008464663
NSN
5961-00-846-4663
MFG
INTERSIL CORPORATION
Description
DESIGN CONTROL REFERENCE: 2N1483
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 34371
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N1483A
TRANSISTOR
NSN, MFG P/N
5961008464663
NSN
5961-00-846-4663
MFG
ADELCO ELEKTRONIK GMBH
Description
DESIGN CONTROL REFERENCE: 2N1483
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 34371
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
5L5512-201-13
TRANSISTOR
NSN, MFG P/N
5961008464663
NSN
5961-00-846-4663
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
DESIGN CONTROL REFERENCE: 2N1483
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 34371
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
352-0055-00
TRANSISTOR
NSN, MFG P/N
5961008464919
NSN
5961-00-846-4919
MFG
ALCATEL USA INC . DIV WTPG
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
352-0055-000
TRANSISTOR
NSN, MFG P/N
5961008464919
NSN
5961-00-846-4919
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
353-2891-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464922
NSN
5961-00-846-4922
353-2891-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464922
NSN
5961-00-846-4922
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 95105
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 353-2891-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
353-2891-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464922
NSN
5961-00-846-4922
353-2891-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464922
NSN
5961-00-846-4922
MFG
ROCKWELL COLLINS FRANCE
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 95105
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 353-2891-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
PS6465
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464922
NSN
5961-00-846-4922
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 95105
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 353-2891-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1705
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464926
NSN
5961-00-846-4926
MFG
PLESSEY SOUTH AFRICA LTD
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N2071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464926
NSN
5961-00-846-4926
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
353-1775-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464926
NSN
5961-00-846-4926
353-1775-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464926
NSN
5961-00-846-4926
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
353-1775-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464926
NSN
5961-00-846-4926
353-1775-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008464926
NSN
5961-00-846-4926
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
