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5961-00-697-3605

20 Products

SMD399227

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006973605

NSN

5961-00-697-3605

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SMD399227

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006973605

NSN

5961-00-697-3605

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

DESIGN CONTROL REFERENCE: SMD399227
MANUFACTURERS CODE: 80063
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

S3600G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006909341

NSN

5961-00-690-9341

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S3600G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006909341

NSN

5961-00-690-9341

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.312 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, DC

19071G1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961006909949

NSN

5961-00-690-9949

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19071G1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961006909949

NSN

5961-00-690-9949

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.562 INCHES NOMINAL
OVERALL LENGTH: 0.687 INCHES NOMINAL
OVERALL WIDTH: 0.562 INCHES NOMINAL

503188

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006910043

NSN

5961-00-691-0043

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503188

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006910043

NSN

5961-00-691-0043

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

1N1789

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006910578

NSN

5961-00-691-0578

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1N1789

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006910578

NSN

5961-00-691-0578

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N1789 TYPE
OVERALL DIAMETER: 0.225 INCHES NOMINAL
OVERALL LENGTH: 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.328 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

57901

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006911095

NSN

5961-00-691-1095

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57901

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006911095

NSN

5961-00-691-1095

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN415E
COAXIAL CONNECTOR SERIES DESIGNATION: UHF
DESIGN CONTROL REFERENCE: 57901
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE
MANUFACTURERS CODE: 15280
OPERATING FREQUENCY: 9.375 GIGAHERTZ NOMINAL
OUTPUT CONTACT TYPE: FEMALE
SPECIAL FEATURES: 0.656 IN. DIA 0.500 IN.
THE MANUFACTURERS DATA:

2N1671A

TRANSISTOR

NSN, MFG P/N

5961006912306

NSN

5961-00-691-2306

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2N1671A

TRANSISTOR

NSN, MFG P/N

5961006912306

NSN

5961-00-691-2306

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.45 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

810000-584

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006912589

NSN

5961-00-691-2589

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810000-584

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006912589

NSN

5961-00-691-2589

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Description

DESIGN CONTROL REFERENCE: 810000-584
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12436
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

RD2728

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006912589

NSN

5961-00-691-2589

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RD2728

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006912589

NSN

5961-00-691-2589

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

DESIGN CONTROL REFERENCE: 810000-584
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 12436
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

10128791

TRANSISTOR

NSN, MFG P/N

5961006912615

NSN

5961-00-691-2615

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10128791

TRANSISTOR

NSN, MFG P/N

5961006912615

NSN

5961-00-691-2615

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM EMITTER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 95.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.625 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -28.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

1N1132

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006913173

NSN

5961-00-691-3173

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1N1132

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006913173

NSN

5961-00-691-3173

MFG

SKYWORKS SOLUTIONS INC.

Description

DESIGN CONTROL REFERENCE: 64D3412
MANUFACTURERS CODE: 80049
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
THE MANUFACTURERS DATA:

64D3412

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006913173

NSN

5961-00-691-3173

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64D3412

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006913173

NSN

5961-00-691-3173

MFG

DEPARTMENT OF THE AIR FORCE

Description

DESIGN CONTROL REFERENCE: 64D3412
MANUFACTURERS CODE: 80049
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
THE MANUFACTURERS DATA:

2N652

TRANSISTOR

NSN, MFG P/N

5961006913608

NSN

5961-00-691-3608

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2N652

TRANSISTOR

NSN, MFG P/N

5961006913608

NSN

5961-00-691-3608

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

1201696

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006935909

NSN

5961-00-693-5909

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1201696

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006935909

NSN

5961-00-693-5909

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES ON-STATE CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 1201696
MANUFACTURERS CODE: 10001
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 2.000 INCHES MAXIMUM
OVERALL LENGTH: 1.590 INCHES MAXIMUM
OVERALL WIDTH: 1.590 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
THE MANUFACTURERS DATA:

188C276

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006935909

NSN

5961-00-693-5909

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188C276

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006935909

NSN

5961-00-693-5909

MFG

GENERAL ELECTRIC CO

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES ON-STATE CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 1201696
MANUFACTURERS CODE: 10001
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 2.000 INCHES MAXIMUM
OVERALL LENGTH: 1.590 INCHES MAXIMUM
OVERALL WIDTH: 1.590 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
THE MANUFACTURERS DATA:

2052575

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006938214

NSN

5961-00-693-8214

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2052575

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006938214

NSN

5961-00-693-8214

MFG

ITT CORPORATION

647575

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006938214

NSN

5961-00-693-8214

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647575

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961006938214

NSN

5961-00-693-8214

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

2SU5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006965405

NSN

5961-00-696-5405

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2SU5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006965405

NSN

5961-00-696-5405

MFG

BOGUE ELECTRIC MANUFACTURING CO

353-1511-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006965405

NSN

5961-00-696-5405

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353-1511-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006965405

NSN

5961-00-696-5405

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

1084143

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006973605

NSN

5961-00-697-3605

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1084143

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961006973605

NSN

5961-00-697-3605

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

DESIGN CONTROL REFERENCE: SMD399227
MANUFACTURERS CODE: 80063
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: