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5961-00-492-2533
20 Products
SPF545
TRANSISTOR
NSN, MFG P/N
5961004922533
NSN
5961-00-492-2533
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.280 INCHES NOMINAL
OVERALL LENGTH: 0.270 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
81-77
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004919033
NSN
5961-00-491-9033
MFG
EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT
Description
DESIGN CONTROL REFERENCE: 913020-024
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13047
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
913020-024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004919033
NSN
5961-00-491-9033
913020-024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004919033
NSN
5961-00-491-9033
MFG
MAURY MICROWAVE INC.
Description
DESIGN CONTROL REFERENCE: 913020-024
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13047
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
D1-2563
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004919033
NSN
5961-00-491-9033
MFG
DIODES INC
Description
DESIGN CONTROL REFERENCE: 913020-024
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 13047
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N4962
TRANSISTOR
NSN, MFG P/N
5961004919068
NSN
5961-00-491-9068
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5521 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
PE6020
TRANSISTOR
NSN, MFG P/N
5961004919068
NSN
5961-00-491-9068
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5521 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
7531331P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004919103
NSN
5961-00-491-9103
7531331P0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004919103
NSN
5961-00-491-9103
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 99971-7531331 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.51 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DT81216B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004919103
NSN
5961-00-491-9103
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 99971-7531331 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.51 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N978B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004921638
NSN
5961-00-492-1638
JANTX1N978B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004921638
NSN
5961-00-492-1638
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 7.40 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N978B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 53.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N978BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004921638
NSN
5961-00-492-1638
JANTX1N978BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004921638
NSN
5961-00-492-1638
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 7.40 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N978B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 53.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
028102
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004921687
NSN
5961-00-492-1687
028102
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004921687
NSN
5961-00-492-1687
MFG
ROGERSON KRATOS
Description
MATERIAL: SILICON
OVERALL DIAMETER: 0.750 INCHES NOMINAL
OVERALL HEIGHT: 0.405 INCHES NOMINAL
Related Searches:
VT400T
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004921687
NSN
5961-00-492-1687
VT400T
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004921687
NSN
5961-00-492-1687
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
MATERIAL: SILICON
OVERALL DIAMETER: 0.750 INCHES NOMINAL
OVERALL HEIGHT: 0.405 INCHES NOMINAL
Related Searches:
40254
TRANSISTOR
NSN, MFG P/N
5961004921728
NSN
5961-00-492-1728
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 666.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 32.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 32.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
720-40254
TRANSISTOR
NSN, MFG P/N
5961004921728
NSN
5961-00-492-1728
MFG
JOHNSON E F CO COMCO/COMMUNICATIONS CO DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 666.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 32.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 32.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
1642031
TRANSISTOR
NSN, MFG P/N
5961004922377
NSN
5961-00-492-2377
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1855-0073
TRANSISTOR
NSN, MFG P/N
5961004922533
NSN
5961-00-492-2533
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.280 INCHES NOMINAL
OVERALL LENGTH: 0.270 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N5462
TRANSISTOR
NSN, MFG P/N
5961004922533
NSN
5961-00-492-2533
MFG
HEWLETT PACKARD CO
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.280 INCHES NOMINAL
OVERALL LENGTH: 0.270 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
S22084
TRANSISTOR
NSN, MFG P/N
5961004922533
NSN
5961-00-492-2533
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.280 INCHES NOMINAL
OVERALL LENGTH: 0.270 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SF89006
TRANSISTOR
NSN, MFG P/N
5961004922533
NSN
5961-00-492-2533
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.280 INCHES NOMINAL
OVERALL LENGTH: 0.270 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SKA4510
TRANSISTOR
NSN, MFG P/N
5961004922533
NSN
5961-00-492-2533
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: UNIJUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.280 INCHES NOMINAL
OVERALL LENGTH: 0.270 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
