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5961-00-172-7865

20 Products

101-000026

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001727865

NSN

5961-00-172-7865

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101-000026

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001727865

NSN

5961-00-172-7865

MFG

DATA GENERAL CORP M/S 9S17

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3944 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

2N4877

TRANSISTOR

NSN, MFG P/N

5961001724817

NSN

5961-00-172-4817

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2N4877

TRANSISTOR

NSN, MFG P/N

5961001724817

NSN

5961-00-172-4817

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 57.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5868 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER O

1683-029

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

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1683-029

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

MFG

WOODWARD GOVERNOR COMPANY DBA INDUSTRIAL PRODUCTS GROUP DIV INDUSTRIAL PRODUCTS GROUP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5555
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HELICOPTER, MH-53E; COMMUNICATIONS SYSTEMS AN/WSC-3; GROUND MOBILE FORCE SATELLITE COMM TERM (AN/TSC-93A); HELICOPTER, ADVANCE ATTACK, AH-1W; COUNTERMEASURE SET, AN/ALQ-156(V)1; TACTICAL AIR OPNS MODULE (AN/TYQ-(23)); SUPPORT EQUIPMENT, B-1 AIRCRAFT;
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:

20-00694-009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

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20-00694-009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5555
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HELICOPTER, MH-53E; COMMUNICATIONS SYSTEMS AN/WSC-3; GROUND MOBILE FORCE SATELLITE COMM TERM (AN/TSC-93A); HELICOPTER, ADVANCE ATTACK, AH-1W; COUNTERMEASURE SET, AN/ALQ-156(V)1; TACTICAL AIR OPNS MODULE (AN/TYQ-(23)); SUPPORT EQUIPMENT, B-1 AIRCRAFT;
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:

353-9016-200

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

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353-9016-200

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5555
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HELICOPTER, MH-53E; COMMUNICATIONS SYSTEMS AN/WSC-3; GROUND MOBILE FORCE SATELLITE COMM TERM (AN/TSC-93A); HELICOPTER, ADVANCE ATTACK, AH-1W; COUNTERMEASURE SET, AN/ALQ-156(V)1; TACTICAL AIR OPNS MODULE (AN/TYQ-(23)); SUPPORT EQUIPMENT, B-1 AIRCRAFT;
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:

48-P28419Y001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

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48-P28419Y001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5555
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HELICOPTER, MH-53E; COMMUNICATIONS SYSTEMS AN/WSC-3; GROUND MOBILE FORCE SATELLITE COMM TERM (AN/TSC-93A); HELICOPTER, ADVANCE ATTACK, AH-1W; COUNTERMEASURE SET, AN/ALQ-156(V)1; TACTICAL AIR OPNS MODULE (AN/TYQ-(23)); SUPPORT EQUIPMENT, B-1 AIRCRAFT;
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:

C09665-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

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C09665-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

MFG

ROSEMOUNT AEROSPACE LTD

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5555
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HELICOPTER, MH-53E; COMMUNICATIONS SYSTEMS AN/WSC-3; GROUND MOBILE FORCE SATELLITE COMM TERM (AN/TSC-93A); HELICOPTER, ADVANCE ATTACK, AH-1W; COUNTERMEASURE SET, AN/ALQ-156(V)1; TACTICAL AIR OPNS MODULE (AN/TYQ-(23)); SUPPORT EQUIPMENT, B-1 AIRCRAFT;
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:

JANTX1N5555

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

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JANTX1N5555

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5555
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HELICOPTER, MH-53E; COMMUNICATIONS SYSTEMS AN/WSC-3; GROUND MOBILE FORCE SATELLITE COMM TERM (AN/TSC-93A); HELICOPTER, ADVANCE ATTACK, AH-1W; COUNTERMEASURE SET, AN/ALQ-156(V)1; TACTICAL AIR OPNS MODULE (AN/TYQ-(23)); SUPPORT EQUIPMENT, B-1 AIRCRAFT;
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:

JANTX1N5555A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

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JANTX1N5555A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001724970

NSN

5961-00-172-4970

MFG

ADELCO ELEKTRONIK GMBH

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5555
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HELICOPTER, MH-53E; COMMUNICATIONS SYSTEMS AN/WSC-3; GROUND MOBILE FORCE SATELLITE COMM TERM (AN/TSC-93A); HELICOPTER, ADVANCE ATTACK, AH-1W; COUNTERMEASURE SET, AN/ALQ-156(V)1; TACTICAL AIR OPNS MODULE (AN/TYQ-(23)); SUPPORT EQUIPMENT, B-1 AIRCRAFT;
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.00 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:

MST300

TRANSISTOR

NSN, MFG P/N

5961001725059

NSN

5961-00-172-5059

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MST300

TRANSISTOR

NSN, MFG P/N

5961001725059

NSN

5961-00-172-5059

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.330 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.501 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

ST1300

TRANSISTOR

NSN, MFG P/N

5961001725062

NSN

5961-00-172-5062

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ST1300

TRANSISTOR

NSN, MFG P/N

5961001725062

NSN

5961-00-172-5062

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

STI-300

TRANSISTOR

NSN, MFG P/N

5961001725062

NSN

5961-00-172-5062

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STI-300

TRANSISTOR

NSN, MFG P/N

5961001725062

NSN

5961-00-172-5062

MFG

SOLITRON DEVICES INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

409D

SEMICONDUCTOR

NSN, MFG P/N

5961001725267

NSN

5961-00-172-5267

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409D

SEMICONDUCTOR

NSN, MFG P/N

5961001725267

NSN

5961-00-172-5267

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

1N4511

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001725922

NSN

5961-00-172-5922

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1N4511

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001725922

NSN

5961-00-172-5922

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

MAJOR COMPONENTS: DIODE 40; HEAT SINK 1; TUBE 1
OVERALL LENGTH: 6.300 INCHES MAXIMUM
OVERALL WIDTH: 2.500 INCHES NOMINAL

7840600P001

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001725922

NSN

5961-00-172-5922

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7840600P001

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961001725922

NSN

5961-00-172-5922

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

MAJOR COMPONENTS: DIODE 40; HEAT SINK 1; TUBE 1
OVERALL LENGTH: 6.300 INCHES MAXIMUM
OVERALL WIDTH: 2.500 INCHES NOMINAL

200945-702

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001727071

NSN

5961-00-172-7071

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200945-702

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001727071

NSN

5961-00-172-7071

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.6 MAXIMUM REVERSE VOLTAGE, PEAK
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

2412208-0002

TRANSISTOR

NSN, MFG P/N

5961001727079

NSN

5961-00-172-7079

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2412208-0002

TRANSISTOR

NSN, MFG P/N

5961001727079

NSN

5961-00-172-7079

MFG

SMITHS DETECTION-EDGEWOOD INC DIV EDGEWOOD

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 23667-2412208 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM GATE TO SOURCE VOLTAGE

FN1966

TRANSISTOR

NSN, MFG P/N

5961001727079

NSN

5961-00-172-7079

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FN1966

TRANSISTOR

NSN, MFG P/N

5961001727079

NSN

5961-00-172-7079

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 23667-2412208 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM GATE TO SOURCE VOLTAGE

M2-5A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001727861

NSN

5961-00-172-7861

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M2-5A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001727861

NSN

5961-00-172-7861

MFG

YOSEMITE INVESTMENT INC DBA NORTH AMERICAN CAPACITOR CO

Description

CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: M2-5A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 37942
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM REVERSE VOLTAGE, PEAK

M2.5A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001727861

NSN

5961-00-172-7861

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M2.5A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001727861

NSN

5961-00-172-7861

MFG

SEMITRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: M2-5A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 37942
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM REVERSE VOLTAGE, PEAK