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5961-00-086-0612

20 Products

JAN2N3634A

TRANSISTOR

NSN, MFG P/N

5961000860612

NSN

5961-00-086-0612

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JAN2N3634A

TRANSISTOR

NSN, MFG P/N

5961000860612

NSN

5961-00-086-0612

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3634
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-357
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/357 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -140.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

72RE100

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000860736

NSN

5961-00-086-0736

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72RE100

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000860736

NSN

5961-00-086-0736

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.810 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM BREAKOVER VOLTAGE, DC

2N328AM

TRANSISTOR

NSN, MFG P/N

5961000861516

NSN

5961-00-086-1516

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2N328AM

TRANSISTOR

NSN, MFG P/N

5961000861516

NSN

5961-00-086-1516

MFG

CRYSTALONICS INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

945557

TRANSISTOR

NSN, MFG P/N

5961000861516

NSN

5961-00-086-1516

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945557

TRANSISTOR

NSN, MFG P/N

5961000861516

NSN

5961-00-086-1516

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

HA7628

TRANSISTOR

NSN, MFG P/N

5961000861516

NSN

5961-00-086-1516

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HA7628

TRANSISTOR

NSN, MFG P/N

5961000861516

NSN

5961-00-086-1516

MFG

RAYTHEON COMPANY

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

6U1811

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000864480

NSN

5961-00-086-4480

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6U1811

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000864480

NSN

5961-00-086-4480

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.000 AMPERES PEAK POINT CURRENT
DESIGN CONTROL REFERENCE: 6U1811
MANUFACTURERS CODE: 83701
MATERIAL: SILICON
OVERALL HEIGHT: 7.000 INCHES NOMINAL
OVERALL LENGTH: 8.188 INCHES NOMINAL
OVERALL WIDTH: 7.500 INCHES NOMINAL
SPECIAL FEATURES: DC OUTPUT MAX VOLTAGE RATING:200.0 VOLTS
THE MANUFACTURERS DATA:

2459396

TRANSISTOR

NSN, MFG P/N

5961000864803

NSN

5961-00-086-4803

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2459396

TRANSISTOR

NSN, MFG P/N

5961000864803

NSN

5961-00-086-4803

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

2N3437

TRANSISTOR

NSN, MFG P/N

5961000864803

NSN

5961-00-086-4803

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2N3437

TRANSISTOR

NSN, MFG P/N

5961000864803

NSN

5961-00-086-4803

MFG

TELCOM SEMICONDUCTOR INC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

2639823

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000864804

NSN

5961-00-086-4804

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2639823

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000864804

NSN

5961-00-086-4804

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

UT401C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000864804

NSN

5961-00-086-4804

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UT401C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000864804

NSN

5961-00-086-4804

MFG

MICRO USPD INC

50M200ZR5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000867000

NSN

5961-00-086-7000

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50M200ZR5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000867000

NSN

5961-00-086-7000

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 50M200ZR5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. AX-262
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

VR100-200R5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000867000

NSN

5961-00-086-7000

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VR100-200R5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000867000

NSN

5961-00-086-7000

MFG

THE TECHNICAL MATERIAL CORPORATION DBA T M C

Description

DESIGN CONTROL REFERENCE: 50M200ZR5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PART NO. AX-262
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

334677-1

TRANSISTOR

NSN, MFG P/N

5961000867634

NSN

5961-00-086-7634

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334677-1

TRANSISTOR

NSN, MFG P/N

5961000867634

NSN

5961-00-086-7634

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

DESIGN CONTROL REFERENCE: 334677-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 56232
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

334677-2

TRANSISTOR

NSN, MFG P/N

5961000867635

NSN

5961-00-086-7635

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334677-2

TRANSISTOR

NSN, MFG P/N

5961000867635

NSN

5961-00-086-7635

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

DESIGN CONTROL REFERENCE: 334677-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 56232
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

334678-1

TRANSISTOR

NSN, MFG P/N

5961000867636

NSN

5961-00-086-7636

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334678-1

TRANSISTOR

NSN, MFG P/N

5961000867636

NSN

5961-00-086-7636

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL LENGTH: 0.230 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

0F11215A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000867923

NSN

5961-00-086-7923

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0F11215A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000867923

NSN

5961-00-086-7923

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

III END ITEM IDENTIFICATION: MK73MOD1,DIRECTOR,GUIDED MISSILE,SER 87UP

2N1878

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000868053

NSN

5961-00-086-8053

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2N1878

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000868053

NSN

5961-00-086-8053

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC

2N1880A

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000868053

NSN

5961-00-086-8053

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2N1880A

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000868053

NSN

5961-00-086-8053

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC

322MS223P001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000868053

NSN

5961-00-086-8053

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322MS223P001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961000868053

NSN

5961-00-086-8053

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKOVER VOLTAGE, DC

1N456

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000868329

NSN

5961-00-086-8329

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1N456

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000868329

NSN

5961-00-086-8329

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK